Tunable near-infrared light emission from layered TiS3 nanoribbons
Junrong Zhang, Cheng Chen, Yanming Wang, Yang Lu, Honghong Li, Xingang Hou, Yaning Liang, Long Fang, Du Xiang, Kai Zhang, Junyong Wang
Tunable near-infrared light emission from layered TiS3 nanoribbons
The low-dimensional light source shows promise in photonic integrated circuits. Stable layered van der Waals material that exhibits luminescence in the near-infrared optical communication waveband is an essential component in on-chip light sources. Herein, the tunable near-infrared photoluminescence (PL) of the air-stable layered titanium trisulfide (TiS3) is reported. Compared with iodine particles as a transport agent, TiS3 grown by chemical vapor transport using sulfur powder as a transport agent has fewer sulfur vacancies, which increases the luminescence intensity by an order of magnitude. The PL emission wavelength can be regulated in the near-infrared regime by thickness control. In addition, we observed an interesting anisotropic strain response of PL in layered TiS3 nanoribbon: a blue shift of PL was achieved when the uniaxial tensile strain was applied along the b-axis, while a negligible shift was observed when the strain was applied along the a-axis. Our work reveals the tunable near-infrared luminescent properties of TiS3 nanoribbons, suggesting their potential applications as near-infrared light sources in photonic integrated circuits.
titanium trisulfide / near-infrared luminescence / S-vacancy / tunability / strain engineering
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