Honorary Editors-in-Chief
Bingkun ZHOU, Tsinghua University, China
 
Editors-in-Chief
Qihuang GONG, Peking University, China
Xinliang ZHANG, Xidian University, China; Huazhong University of Science and Technology, China
 
Associate Editors-in-Chief
Yidong HUANG, Tsinghua University, China
Perry SHUM, Southern University of Science and Technology, China
Jiang TANG, Huazhong University of Science and Technology, China
 
Executive Editors-in-Chief
Jianji DONG, Huazhong University of Science and Technology, China
Jian WANG, Huazhong University of Science and Technology, China
 
Members of Editorial Board
Shahzada AHMAD, Basque Center for Materials, Applications & Nanostructures, Spain
Dayan BAN, University of Waterloo, Canada
Walter BLONDEL, Université de Lorraine, France
Eric CASSAN, Paris-Sud University, France
Pai-Yen CHEN, University of Illinois at Chicago, USA
Yunhong DING, Technical University of Denmark, Denmark
Armin FISCHER, QD Solar, Canada
Weibo GAO, Nanyang Technological University, Singapore
Jr-Hau HE, City University of Hong Kong, China
Ghim Wei HO, National University of Singapore, Singapore
Weisheng HU, Shanghai Jiao Tong University, China
Xiaoyong HU, Peking University, China
Baohua JIA, Swinburne University of Technology, Australia
Toshio KAMIYA, Tokyo Institute of Technology, Japan
Junghwan KIM, Tokyo Institute of Technology, Japan
Howard (Ho Wai) LEE, University of California, Irvine, USA
Tao LI, Nanjing University, China
Yat LI, University of California, Santa Cruz, USA
Zhiyuan LI, South China University of Technology, China
Hongen LIAO, Tsinghua University, China
Aiqun LIU, Nanyang Technological University, Singapore
Yongfeng LU, University of Nebraska-Lincoln, USA
Masoud MAHJOURI-SAMANI, Auburn University, USA
Xiangshui MIAO, Huazhong University of Science and Technology, China
Cun-Zheng NING, Tsinghua University, China; Arizona State University, USA
Anlian PAN, Hunan University, China
Gang-Ding PENG, The University of New South Wales, Australia
Christophe PEUCHERET, Université de Rennes 1, France
Cheng-Wei QIU, National University of Singapore, Singapore
Junle QU, Shenzhen University, China
Junsuk RHO, Pohang University of Science and Technology, Republic of Korea
Filippo ROMANATO, University of Padova, Italy
Michael SALIBA, Technical University of Darmstadt, Germany
Sascha SCHÄFER, The Carl von Ossietzky University of Oldenburg, Germany
Kebin SHI, Peking University, China
Misha SUMETSKY, Aston University, UK
Hongbo SUN, Tsinghua University, China
Zhipei SUN, Aalto University, Finland
Limin TONG, Zhejiang University, China
Din Ping TSAI, City University of Hong Kong, China
Valery TUCHIN, Saratov State University, Russia
Qing WAN, Nanjing University, China
Alan X. WANG, Oregon State University, USA
Mingkui WANG, Huazhong University of Science and Technology, China
Xi WANG, University of Delaware, USA
Xihua WANG, University of Alberta, Canada
Xueding WANG, University of Michigan, USA
Dong WU, University of Science and Technology of China, China
Yunfeng XIAO, Peking University, China
Zewen XIAO, Huazhong University of Science and Technology, China
Wei XIONG, Huazhong University of Science and Technology, China
Xiulai XU, Peking University, China
Lianshan YAN, Southwest Jiaotong University, China
Sihua YANG, South China Normal University, China
Xusan YANG, Northwestern University, USA
Jianping YAO, University of Ottawa, Canada
Changyuan YU, The Hong Kong Polytechnic University, China
Siyuan YU, Sun Yat-sen University, China; University of Bristol, UK
Cheng ZHANG, Huazhong University of Science and Technology, China
Wei ZHANG, Fudan University, China
Weili ZHANG, Oklahoma State University, USA
Wanhua ZHENG, Institute of Semiconductors, Chinese Academy of Sciences, China
Weidong ZHOU, University of Texas at Arlington, USA
Dan ZHU, Huazhong University of Science and Technology, China
Rui ZHU, Peking University, China