Low-dimensional systems, including two-dimensional (2D) materials, one-dimensional (1D) materials, and zero-dimensional (0D) materials, have emerged as one of the most exciting and rapidly advancing fields in condensed matter physics and materials science in recent years. These materials, by virtue of their reduced dimensionality, exhibit a range of unique electronic, optical, and mechanical properties that are fundamentally distinct from those of their bulk counterparts. This dimensional confinement leads to enhanced quantum effects, stronger interactions, and the emergence of novel physical phenomena, making them ideal candidates for exploring new physical states, such as fractional quantum anomalous Hall (FQAH) effect in 2D materials, Luttinger liquid in 1D materials, and relativistic molecular states in 0D quantum dots. These extraordinary properties have not only deepened our understanding of fundamental physics but also opened up new avenues for technological innovation.
This special topic in Frontiers of Physics aims to highlight the most recent breakthroughs in low-dimensional material research, providing a comprehensive overview of the current state of the field. The scope of this special issue covers the synthesis, characterization, and theoretical studies of low-dimensional materials, as well as their potential applications in emerging areas. We aim to showcase cutting-edge research from both experimental and theoretical perspectives, offering a holistic view of the latest developments in this fast-evolving domain.
Specific materials of interest covered in this issue include
● 2D materials, such as graphene, hBN, transition metal dichalcogenides and their heterostructures;
● Topological insulators and semimetals;
● Low-dimensional superconductors and magnetic materials;
● 1D materials, such as 1D domain wall, 1D boundary, and 1D nanowires;
● 0D materials, such as quantum dots, islands, clusters, atomic defects, molecules.
We invite contributions from leading scientists worldwide, including review articles, original research, and perspectives on the current and future developments in this field. There is no strict length limit for each article, and for each review at least 15 pages length is highly expected. Co-authorship is welcome.
Here is the format-free submission statement: https://journal.hep.com.cn/fop/EN/column/column15258.shtml and the new manuscript can be submitted online through http://mc.manuscriptcentral.com/fop. All online versions of the articles can be freely browsed and downloaded and a copy of the volume will be mailed to all participants.
Sincerely,
Lin He, Beijing Normal University, E-mail: helin@bnu.edu.cn
Two-dimensional materials offer great potential for addressing the constraints of conventional semiconductors in the post-Moore era; however, the persuit of stable p-type two-dimensional semiconductors with high mobility remains a formidable challenge. Tellurium emerges as a noteworthy candidate for p-type two-dimensional semiconductors due to its high hole mobility, outstanding chemical stability, and polarization-dependent optoelectronic characteristics. Its anisotropic crystal structure and thickness-dependent bandgap render it particularly suitable for next-generation electronic and optoelectronic applications, with recent advancements demonstrating its exceptional performance. Furthermore, the intrinsic topological features of tellurium, such as strong spin−orbit coupling and Weyl points situated below the Fermi level, classify it as a topological semiconductor — a pioneering category of quantum materials that provides innovative avenues for merging topological physics with conventional semiconductor technologies. The remarkable synergy of mobility, stability, and intrinsic topological attributes in tellurium positions it as a transformative material for the advancement of sophisticated electronic, optoelectronic and quantum systems, among other applications.
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