Low-dimensional tellurium for electronics, optoelectronics, quantum devices and beyond

Abstract

Two-dimensional materials offer great potential for addressing the constraints of conventional semiconductors in the post-Moore era; however, the persuit of stable p-type two-dimensional semiconductors with high mobility remains a formidable challenge. Tellurium emerges as a noteworthy candidate for p-type two-dimensional semiconductors due to its high hole mobility, outstanding chemical stability, and polarization-dependent optoelectronic characteristics. Its anisotropic crystal structure and thickness-dependent bandgap render it particularly suitable for next-generation electronic and optoelectronic applications, with recent advancements demonstrating its exceptional performance. Furthermore, the intrinsic topological features of tellurium, such as strong spin−orbit coupling and Weyl points situated below the Fermi level, classify it as a topological semiconductor — a pioneering category of quantum materials that provides innovative avenues for merging topological physics with conventional semiconductor technologies. The remarkable synergy of mobility, stability, and intrinsic topological attributes in tellurium positions it as a transformative material for the advancement of sophisticated electronic, optoelectronic and quantum systems, among other applications.

Graphical abstract

Keywords

tellurium / two-dimensional semiconductors / topological semiconductor

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 62205011, 52302189, U24A20302, and 62274046), the Fundamental Research Funds for the Central Universities (No. buctrc202122), the R&D Program of Beijing Municipal Education Commission (No. KM202310028013), and the Singapore National Research Foundation (No. NRF-CRP22-2019-7240004).

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