Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current

Abstract

Dielectric engineering plays a crucial role in the process of device miniaturization. Herein we investigate the electrical properties of bilayer GaSe metal-oxide-semiconductor field-effect transistors (MOSFETs), considering hetero-gate-dielectric construction, dielectric materials and GaSe stacking pattern. The results show that device performance strongly depends on the dielectric constants and locations of insulators. When high-k dielectric is placed close to the drain, it behaves with a larger on-state current (I_on) of 5052 μA/μm when the channel is 5 nm. Additionally, when the channel is 5 nm and insulator is HfO₂, the largest I_on is 5134 μA/μm for devices with AC stacking GaSe channel. In particular, when the gate length is 2 nm, it still meets the HP requirements of ITRS 2028 for the device with AA stacking when high-k dielectric is used. Hence, the work provides guidance to regulate the performance of the two-dimensional nanodevices by dielectric engineering.

Graphical abstract

Keywords

GaSe stacking pattern / metal-oxide-semiconductor field-effect transistors (MOSFETs) / ultrahigh on-state current / dielectric engineering

References

[1] J. Jiang, Y. Wen, H. Wang, L. Yin, R. Cheng, C. Liu, L. Feng, J. He. Recent advances in 2D materials for photodetectors. Adv. Electron. Mater., 2021, 7(7): 2001125

[2] M. Long, P. Wang, H. Fang, W. Hu. Progress, challenges, and opportunities for 2D material based photodetectors. Adv. Funct. Mater., 2019, 29(19): 1803807

[3] L. Zhang, Y. Yang, J. Chen, L. Zhang. Photogalvanic effect induced charge and spin photocurrent in group-V monolayer systems. Front. Phys., 2023, 18(6): 62301

[4] X. Li, P. Yuan, M. He, L. Li, J. Du, W. Xiong, C. Xia, L. Kou. Optoelectronic properties and applications of two-dimensional layered semiconductor van der Waals heterostructures: Perspective from theory. J. Phys.: Condens. Matter, 2023, 35(4): 043001

[5] M. Bikerouin, O. Chdil, M. Balli. Solar cells based on 2D Janus group-III chalcogenide van der Waals heterostructures. Nanoscale, 2023, 15(15): 7126

[6] H. Li, L. Lin, L. Yao, F. Wu, D. Wei, G. Liu, Z. Huang, S. Chen, J. Li, G. Chen. High‐efficiency Sb₂(S, Se)₃ solar cells with new hole transport layer-free back architecture via 2D titanium-carbide Mxene. Adv. Funct. Mater., 2022, 32(10): 2110335

[7] V. K. Sangwan, H. S. Lee, H. Bergeron, I. Balla, M. E. Beck, K. S. Chen, M. C. Hersam. Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide. Nature, 2018, 554(7693): 500

[8] L. Yin, R. Cheng, Z. Wang, F. Wang, M. G. Sendeku, Y. Wen, X. Zhan, J. He. Two-dimensional unipolar memristors with logic and memory functions. Nano Lett., 2020, 20(6): 4144

[9] W. Niu, G. Ding, Z. Jia, X. Ma, J. Zhao, K. Zhou, S. Han, C. Kuo, Y. Zhou. Recent advances in memristors based on two-dimensional ferroelectric materials. Front. Phys., 2024, 19(1): 13402

[10] L. Mennel, J. Symonowicz, S. Wachter, D. K. Polyushkin, A. J. Molina-Mendoza, T. Mueller. Ultrafast machine vision with 2D material neural network image sensors. Nature, 2020, 579(7797): 62

[11] W. Huh, D. Lee, C. H. Lee. Memristors based on 2D materials as an artificial synapse for neuromorphic electronics. Adv. Mater., 2020, 32(51): 2002092

[12] D. Xiang, T. Liu, X. Zhang, P. Zhou, W. Chen. Dielectric engineered two-dimensional neuromorphic transistors. Nano Lett., 2021, 21(8): 3557

[13] J. H. Ju, S. Seo, S. Baek, D. Lee, S. Lee, T. Lee, B. Kim, J. J. Lee, J. Koo, H. Choo, S. Lee, J. H. Park. Two-dimensional MXene synapse for brain-inspired neuromorphic computing. Small, 2021, 17(34): 2102595

[14] R. K. A. Bennett, Y. Yoon. Using anisotropic insulators to engineer the electrostatics of conventional and tunnel field-effect transistors. IEEE Trans. Electron Dev., 2021, 68(2): 865

[15] C.TanM. YuJ.TangX.GaoY.Yin Y.ZhangJ. WangX.GaoC.ZhangX.Zhou L.ZhengH. LiuK.JiangF.DingH.Peng, 2D fin field-effect transistors integrated with epitaxial high-k gate oxide, Nature 616(7955), 66 (2023)

[16] W. Zhou, S. Zhang, S. Guo, H. Qu, B. Cai, X. Chen, H. Zeng. High-performance monolayer Na₃Sb shrinking transistors: a DFT-NEGF study. Nanoscale, 2020, 12(36): 18931

[17] R. K. A. Bennett, Y. Yoon. Exploiting fringing fields created by high-κ gate insulators to enhance the performance of ultrascaled 2D-material-based transistors. IEEE Trans. Electron Dev., 2021, 68(9): 4618

[18] W. Y. Choi, W. Lee. Hetero-gate-dielectric tunneling field-effect transistors. IEEE Trans. Electron Dev., 2010, 57(9): 2317

[19] J. Madan, R. Chaujar. Gate drain-overlapped-asymmetric gate dielectric-GAA-TFET: A solution for suppressed ambipolarity and enhanced ON state behavior. Appl. Phys. A, 2016, 122(11): 973

[20] X. P. Li, P. Z. Yuan, L. Li, M. J. He, J. B. Li, C. X. Xia. Sub-5-nm monolayer GaSe MOSFET with ultralow subthreshold swing and high on-state current: Dielectric layer effects. Phys. Rev. Appl., 2022, 18(4): 044012

[21] A. Kuc, T. Cusati, E. Dib, A. F. Oliveira, A. Fortunelli, G. Iannaccone, T. Heine, G. Fiori. High-performance 2D p-type transistors based on GaSe layers: An ab initio study. Adv. Electron. Mater., 2017, 3(2): 1600399

[22] Y. Cui, L. Peng, L. Sun, Q. Qian, Y. Huang. Two-dimensional few-layer group-III metal monochalcogenides as effective photocatalysts for overall water splitting in the visible range. J. Mater. Chem. A, 2018, 6(45): 22768

[23] D. J. Late, B. Liu, J. Luo, A. Yan, H. S. Matte, M. Grayson, C. N. Rao, V. P. Dravid. GaS and GaSe ultrathin layer transistors. Adv. Mater., 2012, 24(26): 3549

[24] B. Chitara, A. Ya’akobovitz. Elastic properties and breaking strengths of GaS, GaSe and GaTe nanosheets. Nanoscale, 2018, 10(27): 13022

[25] M.W. ChenH. KimD.OvchinnikovA.KucT.Heine O.RenaultA. Kis, Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion, npj 2D Mater. Appl. 2(1), 2 (2018)

[26] C. Si, Z. Lin, J. Zhou, Z. Sun. Controllable Schottky barrier in GaSe/graphene heterostructure: The role of interface dipole. 2D Mater., 2016, 4(1): 015027

[27] D. J. Late, B. Liu, H. S. S. R. Matte, C. N. R. Rao, V. P. Dravid. Rapid characterization of ultrathin layers of chalcogenides on SiO₂/Si substrates. Adv. Funct. Mater., 2012, 22(9): 1894

[28] P. A. Hu, Z. Wen, L. Wang, P. Tan, K. Xiao. Synthesis of few-layer GaSe nanosheets for high performance photodetectors. ACS Nano, 2012, 6(7): 5988

[29] J. Palepu, A. Tiwari, P. Sahatiya, S. Kundu, S. Kanungo. Effects of artificial stacking configurations and biaxial strain on the structural, electronic and transport properties of bilayer GaSe − A first principle study. Mater. Sci. Semicond. Process., 2022, 137: 106236

[30] L. Li, P. Z. Yuan, T. Liu, Z. A. Ma, C. X. Xia, X. P. Li. Self-powered broadband photodetector based on a monolayer InSe p−i−n homojunction. Phys. Rev. Appl., 2023, 19(1): 014039

[31] X. Li, P. Yuan, L. Li, T. Liu, C. Shen, Y. Jiang, X. Song, C. Xia. Two dimensional GeO₂/MoSi₂N₄ van der Waals heterostructures with robust type-II band alignment. Front. Phys., 2023, 18(1): 13305

[32] X. Li, Z. Wang, L. Li, P. Yuan, X. Tang, C. Shen, Y. Jiang, X. Song, C. Xia. Orientation-dependent transport and photo detection in WSe₂/MoSe₂ planar heterojunction transistors. IEEE Trans. Electron Dev., 2023, 20(6): 064050

[33] X. Li, T. Li, P. Yuan, L. Li, C. Shen, Y. Jiang, X. Song, C. Xia. Ultrahigh current and ultralow power dissipation of Janus monolayer IIIA-VIA Ga2XY MOSFETs. Appl. Surf. Sci., 2023, 630: 157436

[34] J. P. Perdew, K. Burke, M. Ernzerhof. Generalized gradient approximation made simple. Phys. Rev. Lett., 1996, 77(18): 3865

[35] Z. Q. Fan, X. W. Jiang, J. W. Luo, L. Y. Jiao, R. Huang, S. S. Li, L. W. Wang. In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides. Phys. Rev. B, 2017, 96(16): 165402

[36] W. Zhou, H. Qu, S. Guo, B. Cai, H. Chen, Z. Wu, H. Zeng, S. Zhang. Dependence of tunneling mechanism on two-dimensional material parameters: A high-throughput study. Phys. Rev. Appl., 2022, 17(6): 064053

[37] W. K. Zhao, D. Q. Zou, Z. P. Sun, Y. Q. Xu, G. M. Ji, X. T. Li, C. L. Yang. High-performance monolayer SiMe-graphene n-type field-effect transistors with low supply voltage and high on-state current in sub-5 nm gate length. Adv. Electron. Mater., 2022, 8(7): 2101359

[38] Y. Yin, C. Shao, H. Guo, J. Robertson, Z. Zhang, Y. Guo. Negative differential resistance effect in “cold” metal heterostructure diodes. IEEE Electron Device Lett., 2022, 43(3): 498

[39] L. Kong, X. Zhang, Q. Tao, M. Zhang, W. Dang, Z. Li, L. Feng, L. Liao, X. Duan, Y. Liu. Doping-free complementary WSe₂ circuit via van der Waals metal integration. Nat. Commun., 2020, 11(1): 1866

[40] R. Duflou, G. Pourtois, M. Houssa, A. Afzalian. Fundamentals of low-resistive 2D-semiconductor metal contacts: An ab-initio NEGF study. npj 2D Mater. Appl., 2023, 7(1): 38

[41] H. Mamori, A. El Kenz, A. Benyoussef, A. Taleb, A. Ennaoui, K. El Maalam, M. Hamedoun, O. Mounkachi. Dynamic stability in phosphorene bilayer with different stacking orders: A first principle study. Mater. Sci. Semicond. Process., 2022, 140: 106341

[42] P. Luo, C. Liu, J. Lin, X. Duan, W. Zhang, C. Ma, Y. Lv, X. Zou, Y. Liu, F. Schwierz, W. Qin, L. Liao, J. He, X. Liu. Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation. Nat. Electron., 2022, 5(12): 849

[43] Q. Li, S. Fang, S. Liu, L. Xu, L. Xu, C. Yang, J. Yang, B. Shi, J. Ma, J. Yang, R. Quhe, J. Lu. Performance limit of ultrathin GaAs transistors. ACS Appl. Mater. Interfaces, 2022, 14(20): 23597

[44] H. Li, Q. Wang, F. Liu, J. Lu. Lifting on-state currents for GeS-based tunneling field-effect transistors with electrode optimization. Appl. Surf. Sci., 2022, 602: 154297

[45] W. Zhou, S. Guo, H. Zeng, S. Zhang. High-performance monolayer BeN₂ transistors with ultrahigh on-state current: A DFT coupled with NEGF study. IEEE Trans. Electron Dev., 2022, 69(8): 4501

[46] J. Lyu, S. Song, J. Gong. Bi₂O₂Se/Xene for steep-slope transistors. ACS Appl. Electron. Mater., 2023, 5(8): 4248

[47] Y. Ke, W. Li, G. Yin, L. Zhang, R. Quhe. Quantum transport simulations of a proposed logic-in-memory device based on a bipolar magnetic semiconductor. Phys. Rev. Appl., 2023, 20(1): 014050

[48] P. Sang, Q. Wang, W. Wei, L. Tai, X. Zhan, Y. Li, J. Chen. Two-dimensional silicon atomic layer field-effect transistors: Electronic property, metal-semiconductor contact, and device performance. IEEE Trans. Electron Dev., 2022, 69(4): 2173

[49] H. V. Phuc, N. N. Hieu, B. D. Hoi, C. V. Nguyen. Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer−GaSe van der Waals heterostructure. Phys. Chem. Chem. Phys., 2018, 20(26): 17899

[50] J. Grzonka, M. S. Claro, A. Molina‐Sánchez, S. Sadewasser, P. J. Ferreira. Novel polymorph of GaSe. Adv. Funct. Mater., 2021, 31(48): 2104965

[51] Z. Ben Aziza, V. Zólyomi, H. Henck, D. Pierucci, M. G. Silly, J. Avila, S. J. Magorrian, J. Chaste, C. Chen, M. Yoon, K. Xiao, F. Sirotti, M. C. Asensio, E. Lhuillier, M. Eddrief, V. I. Fal’ko, A. Ouerghi. Valence band inversion and spin−orbit effects in the electronic structure of monolayer GaSe. Phys. Rev. B, 2018, 98(11): 115405

[52] TheInternational Technology Roadmap for Semiconductors (ITRS), www.semiconductors.org/resources/2013

[53] H. Xie, X. Cai, K. Cui, X. Yi, J. Lu, Z. Fan. High-performance monolayer or bilayer SiC short channel transistors with metallic 1T-phase MoS₂ contact. Phys. Lett. A, 2022, 436: 128070

Declarations

The authors declare that they have no competing interests and there are no conflicts.

Electronic supplementary materials

The online version contains supplementary material available at https://doi.org/10.1007/s11467-023-1390-3 and https://journal.hep.com.cn/fop/EN/10.1007/s11467-023-1390-3.

Acknowledgements

This research was supported by the National Natural Science Foundation of China (Grants Nos. 12374070 and 12074103), the Foundation for University Key Young Teacher of Henan (Grant No. 2023GGJS035), Henan Province Postdoctoral Project Launch Funding (Grant No. 5201029430112), and the Science and Technology Program of Henan (Grant No. 232102230080). The calculations are also supported by the High Performance Computing Center of Henan Normal University.

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