RESEARCH ARTICLE

Dependence of error sensitivity of frequency on bias voltage in force-balanced micro accelerometer

  • Lili CHEN 1 ,
  • Wu ZHOU , 2
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  • 1. Department of Mechanical and Electrical Engineering, Chengdu Technological University, Chengdu 611730, China
  • 2. School of Mechatronics Engineering, University of Electronic Technology and Science of China, Chengdu 611731, China

Received date: 29 Mar 2012

Accepted date: 28 May 2012

Published date: 05 Jun 2013

Copyright

2014 Higher Education Press and Springer-Verlag Berlin Heidelberg

Abstract

To predict more precisely the frequency of force-balanced micro accelerometer with different bias voltages, the effects of bias voltages on error sensitivity of frequency is studied. The resonance frequency of accelerometer under closed loop control is derived according to its operation principle, and its error sensitivity is derived and analyzed under over etching structure according to the characteristics of Deep Reaction Ion Etching (DRIE). Based on the theoretical results, micro accelerometer is fabricated and tested to study the influences of AC bias voltage and DC bias voltage on sensitivity, respectively. Experimental results indicate that the relative errors between test data and theory data are less than 7%, and the fluctuating value of error sensitivity under the range of voltage adjustment is less than 0.01 μm-1. It is concluded that the error sensitivity with designed parameters of structure, circuit and process error can be used to predict the frequency of accelerometer with no need to consider the influence of bias voltage.

Cite this article

Lili CHEN , Wu ZHOU . Dependence of error sensitivity of frequency on bias voltage in force-balanced micro accelerometer[J]. Frontiers of Mechanical Engineering, 2013 , 8(2) : 146 -149 . DOI: 10.1007/s11465-013-0260-z

Acknowledgements

This research was partially supported by the National Natural Science Foundation of China (Grant No. 51175437), the Fundamental Research Funds for the Central Universities (No. ZYGX2011J085). The authors would like to acknowledge Dr. Zhang Fengtian, Mr. Shi Zhigui and Mr. Du Lianming for their assistance in fabrication and experiments.
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