Oxide transistors have advanced significantly, gradually replacing materials like amorphous silicon in certain applications due to their excellent performance, transparency, and flexibility. These qualities make them crucial for displays, sensors, and other flexible electronics. However, challenges remain, particularly in the development of p-type oxide semiconductors, which are much less advanced than n-type ones. P-type semiconductors with high hole mobility, stability, and easy fabrication are scarce, hindering the progress of complementary oxide technology. Additionally, the rapid evolution of display technology has raised the bar for oxide transistor driving technology, making it increasingly difficult to balance mobility and stability. Achieving this balance requires in-depth research and innovative solutions. Oxide transistors also show promise for use in storage devices, logic circuits, and 3D integrated systems. With ongoing research, oxide transistors have the potential to transform industries by enabling more efficient, durable, and versatile electronic and optoelectronic devices.

The scope of this focus issue in Frontiers of Physics will cover all aspects of material design and innovation, experimental characterizations, electronic properties, and stability properties, among others. This special issue will present the major recent progress in this field from the best experimental and theoretical teams worldwide. We hope that the issue will provide a broad overview of the current state of this cutting-edge field.

Specific interests covered in this issue include

 ●  Material Design and Innovation

 ●  Fabrication Techniques and Process Engineering

 ●  Electrical and Optical Properties of Oxide Transistors

 ●  Applications in Flexible, Transparent, and Low-Power Electronics

 ●  Next-Generation Applications

 ●  Reliability, Stability, and Long-Term Performance

 ●  Emerging Trends and Future Directions

We are seeking distinguished scientists from both China and abroad to contribute to our special issue with submissions including Reviews, Topical Reviews, Views & Perspectives, Reports, Research Articles, and Letters in the foresaid areas. Authors are encouraged to select a compelling topic that aligns with the focus of the issue. Co-authorship is welcomed. Although there are no strict length limitations for articles, Reviews should adhere to the minimum length of 15 pages. Publication fees will be waived for all contributors, and all articles published online will be accessible for free download. The deadline for submissions is October 31, 2025. Authors needing an extension are kindly asked to notify us in advance.

We look forward to receiving your submission.

Sincerely,

Lei Liao, Hunan University, E-mail: liaolei@whu.edu.cn, liaolei@hnu.edu.cn

Xingqiang Liu, Hunan University, E-mail: liuxq@hnu.edu.cn

Cong Ye,  Hubei University, E-mail: yecong@issp.ac.cn

Lingyan Liang, Ningbo Institute of Industrial Technology, CAS, E-mail: lly@nimte.ac.cn