Transition metal dichalcogenides (TMDCs) heterostructures: Optoelectric properties

Abstract

Transition metal dichalcogenides (TMDCs) have suitable and adjustable band gaps, high carrier mobility and yield. Layered TMDCs have attracted great attention due to the structure diversity, stable existence in normal temperature environment and the band gap corresponding to wavelength between infrared and visible region. The ultra-thin, flat, almost defect-free surface, excellent mechanical flexibility and chemical stability provide convenient conditions for the construction of different types of TMDCs heterojunctions. The optoelectric properties of heterojunctions based on TMDCs materials are summarized in this review. Special electronic band structures of TMDCs heterojunctions lead to excellent optoelectric properties. The emitter, p-n diodes, photodetectors and photosensitive devices based on TMDCs heterojunction materials show excellent performance. These devices provide a prototype for the design and development of future high-performance optoelectric devices.

Graphical abstract

Keywords

transition metal dichalcogenides (TMDCs) / heterostructures / optoelectric properties

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 91436102 and 11374353) and the Fundamental Research Funds for the Central Universities (Grant No. 06500067).

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