Interlayer interaction mechanism and its regulation on optical properties of bilayer SiCNSs
Received date: 01 Dec 2022
Accepted date: 09 Jan 2023
Copyright
Silicon carbide nanosheets (SiCNSs) have a very broad application prospect in the field of new two-dimensional (2D) materials. In this paper, the interlayer interaction mechanism of bilayer SiCNSs (BL-SiCNSs) and its effect on optical properties are studied by first principles. Taking the charge and dipole moment of the layers as parameters, an interlayer coupling model is constructed which is more convenient to control the photoelectric properties. The results show that the stronger the interlayer coupling, the smaller the band gap of BL-SiCNSs. The interlayer coupling also changes the number of absorption peaks and causes the red or blue shift of absorption peaks. The strong interlayer coupling can produce obvious dispersion and regulate the optical transmission properties. The larger the interlayer distance, the smaller the permittivity in the vertical direction. However, the permittivity of the parallel direction is negative in the range of 150-300 nm, showing obvious metallicity. It is expected that the results will provide a meaningful theoretical basis for further study of SiCNSs optoelectronic devices.
Shuang-Shuang Kong , Wei-Kai Liu , Xiao-Xia Yu , Ya-Lin Li , Liu-Zhu Yang , Yun Ma , Xiao-Yong Fang . Interlayer interaction mechanism and its regulation on optical properties of bilayer SiCNSs[J]. Frontiers of Physics, 2023 , 18(4) : 43302 . DOI: 10.1007/s11467-023-1263-9
1 |
J. J. Wang , X. Y. Fang , G. Y. Feng , W. L. Song , Z. L. Hou , H. B. Jin , J. Yuan , M. S. Cao . Scattering mechanisms and anomalous conductivity of heavily N-doped 3C-SiC in ultraviolet region. Phys. Lett. A, 2010, 374(22): 2286
|
2 |
X. L. Feng , M. H. Matheny , C. A. Zorman , M. Mehregany , M. L. Roukes . Low voltage nanoelectromechanical switches based on silicon carbide nanowires. Nano Lett., 2010, 10(8): 2891
|
3 |
X. Y. Fang , K. Wang , Z. L. Hou , H. B. Jin , Y. Q. Li , M. S. Cao . Electronic scattering leads to anomalous thermal conductivity of n-type cubic silicon carbide in the high-temperature region. J. Phys. :Condens. Matter, 2012, 24(44): 445802
|
4 |
R. Maboudian , C. Carraro , D. G. Senesky , C. S. Roper . Advances in silicon carbide science and technology at the micro- and nanoscales. J. Vac. Sci. Technol. A, 2013, 31(5): 050805
|
5 |
H.Okumura, A roadmap for future wide bandgap semiconductor power electronics, MRS Bull. 40(5), 439 (2015)
|
6 |
B.WhitakerA.BarkleyZ.ColeB.PassmoreD.MartinT.R. McNuttA.B. LostetterJ.S. LeeK.Shiozaki, A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide power devices, IEEE Trans. Power Electron. 29(5), 2606 (2014)
|
7 |
H. Ou , Y. Ou , A. Argyraki , S. Schimmel , M. Kaiser , P. Wellmann , M. K. Linnarsson , V. Jokubavicius , J. Sun , R. Liljedahl , M. Syväjärvi . Advances in wide bandgap SiC for optoelectronics. Eur. Phys. J. B, 2014, 87(3): 58
|
8 |
G. Cheng , T. H. Chang , Q. Qin , H. Huang , Y. Zhu . Mechanical properties of silicon carbide nanowires: effect of size-dependent defect density. Nano Lett., 2014, 14(2): 754
|
9 |
M. Awais , H. Mousa , K. Teker . Effect of pH on transport characteristics of silicon carbide nanowire field-effect transistor (SiCNW-FET). J. Mater. Sci. Mater. Electron., 2021, 32(3): 3431
|
10 |
X. Zhang , J. Wang , Z. Yang , X. Tang , Y. Yue . Strong structural occupation ratio effect on mechanical properties of silicon carbide nanowires. Sci. Rep., 2020, 10(1): 11386
|
11 |
S. Li , J. Li , Q. Su , X. Liu , H. Zhao , M. Ding . Enhanced n-type conductivity of 6H-SiC nanowires by nitrogen doping. Micro & Nano Lett., 2019, 14(9): 999
|
12 |
H. Gao , H. Wang , M. Niu , L. Su , X. Fan , J. Wen , Y. Wei . Oxidation simulation study of silicon carbide nanowires: A carbon-rich interface state. Appl. Surf. Sci., 2019, 493: 882
|
13 |
Y. H. Jia , P. Gong , S. L. Li , W. D. Ma , X. Y. Fang , Y. Y. Yang , M. S. Cao . Effects of hydroxyl groups and hydrogen passivation on the structure, electrical and optical properties of silicon carbide nanowires. Phys. Lett. A, 2020, 384(4): 126106
|
14 |
P.NematollahiM.D. Esrafili, A DFT study on the N2O reduction by CO molecule over silicon carbide nanotubes and nanosheets, RSC Adv. 6(64), 59091 (2016)
|
15 |
R. S. Singh , A. Solanki . Modulation of electronic properties of silicon carbide nanotubes via sulphur-doping: An ab initio study. Phys. Lett. A, 2016, 380(11−12): 1201
|
16 |
W.Q. LinF.LiG.H. ChenS.T. XiaoL.Y. WangQ.Wang, A study on the adsorptions of SO2 on pristine and phosphorus-doped silicon carbide nanotubes as potential gas sensors, Ceram. Int. 46(16), 25171 (2020)
|
17 |
Y. Y. Yang , P. Gong , W. D. Ma , R. Hao , X. Y. Fang . Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes. Chin. Phys. B, 2021, 30(6): 067803
|
18 |
P. Gong , Y. Y. Yang , W. D. Ma , X. Y. Fang , X. L. Jing , Y. H. Jia , M. S. Cao . Transport and recombination properties of group-III doped SiCNTs. Physica E, 2021, 128: 114578
|
19 |
J. M. Zhang , F. L. Zheng , Y. Zhang , V. Ji . First-principles study on electronic properties of SiC nanoribbon. J. Mater. Sci., 2010, 45(12): 3259
|
20 |
Y. Z. Li , M. Y. Sun , X. X. Yu , W. K. Liu , S. S. Kong , Y. L. Li , X. Y. Fang . First-principles study on optical properties of group-III doped SiCNRs. Mater. Today Commun., 2022, 32: 104179
|
21 |
Y. Z. Li , M. Y. Sun , X. X. Yu , W. K. Liu , S. S. Kong , Y. L. Li , X. Y. Fang . Theoretical study on transport properties of group-III doped SiCNRs. Eur. Phys. J. Plus, 2022, 137(9): 995
|
22 |
E. Bekaroglu , M. Topsakal , S. Cahangirov , S. Ciraci . First-principles study of defects and adatoms in silicon carbide honeycomb structures. Phys. Rev. B, 2010, 81(7): 075433
|
23 |
H. L. Zhu , Z. F. Hong , C. J. Zhou , Q. H. Wu , T. C. Zheng , L. Yang , S. Q. Lan , W. F. Yang . Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions. Front. Phys., 2023, 18(1): 13301
|
24 |
S. S. Lin . Light-emitting two-dimensional ultrathin silicon carbide. J. Phys. Chem. C, 2012, 116(6): 3951
|
25 |
L.SunB.WangY.Wang, A novel silicon carbide nanosheet for high-performance humidity sensor, Adv. Mater. Interfaces 5(6), 1701300 (2018)
|
26 |
M. Houmad , O. Dakir , A. Abbassi , A. Benyoussef , A. El Kenz , H. Ez-Zahraouy . Optical properties of SiC nanosheet. Optik (Stuttg.), 2016, 127(4): 1867
|
27 |
X.LinS.LinY.XuA.A. HakroT.HasanB.ZhangB.YuJ.LuoE.LiH.Chen, Ab initio study of electronic and optical behavior of two-dimensional silicon carbide, J. Mater. Chem. C 1(11), 2131 (2013)
|
28 |
Q. Chen , Y. Jiang , Y. Wang , H. Li , C. Yu , J. Cui , Y. Qin , J. Sun , J. Yan , H. Zheng , D. Chen , J. Wu , Y. Zhang , Y. Wu . Enhanced supercapacitive performance of novel ultrathin sic nanosheets directly by liquid phase exfoliation. Inorg. Chem. Commun., 2019, 106(6): 174
|
29 |
L. Sun , B. Wang , Y. Wang . High-temperature gas sensor based on novel Pt single atoms@SnO2 nanorods@SiC nanosheets multi-heterojunctions. ACS Appl. Mater. Interfaces, 2020, 12(19): 21808
|
30 |
W. K. Liu , S. S. Kong , X. X. Yu , Y. L. Li , L. Z. Yang , Y. Ma , X. Y. Fang . Interlayer coupling, electronic and optical properties of few-layer silicon carbide nanosheets. Mater. Today Commun., 2023, 34: 105030
|
31 |
P. N. Nirmalraj , T. Lutz , S. Kumar , G. S. Duesberg , J. J. Boland . Nanoscale mapping of electrical resistivity and connectivity in graphene strips and networks. Nano Lett., 2011, 11(1): 16
|
32 |
X. Y. Fang , X. X. Yu , H. M. Zheng , H. B. Jin , L. Wang , M. S. Cao . Temperature-and thickness-dependent electrical conductivity of few-layer graphene and graphene nanosheets. Phys. Lett. A, 2015, 379(37): 2245
|
33 |
J. Song , H. Liu , D. J. Henry . Layer effects on electronic structures of multi-walled armchair silicon carbide nanotubes. Comput. Mater. Sci., 2016, 125: 117
|
34 |
H. Cheng , J. C. Zheng . Ab initio study of anisotropic mechanical and electronic properties of strained carbon−nitride nanosheet with interlayer bonding. Front. Phys., 2021, 16(4): 43505
|
35 |
P. Gong , Y. Z. Li , M. Y. Sun , X. Y. Fang , X. L. Jing , M. S. Cao . Effect of inter-wall coupling on the electronic structure and optical properties of group-III doped SiCNTs. Physica B, 2021, 620(4): 413276
|
36 |
J. P. Perdew , K. Burke , M. Ernzerhof . Generalized gradient approximation made simple. Phys. Rev. Lett., 1996, 77(18): 3865
|
37 |
A. Tkatchenko , M. Scheffler . Accurate molecular van der Waals interactions from ground-state electron density and free-atom reference data. Phys. Rev. Lett., 2009, 102(7): 073005
|
38 |
Y. Z. Li , M. Y. Sun , X. X. Yu , W. K. Liu , S. S. Kong , P. Gong , X. Y. Fang . Comparative study on the optical properties of group-V doped SiC nanoribbons. Mater. Sci. Eng. B, 2022, 284: 115896
|
39 |
M. Y. Sun , Y. Z. Li , X. X. Yu , W. K. Liu , S. S. Kong , P. Gong , X. Y. Fang . Comparative study on transport and optical properties of silicon carbide nanoribbons with different terminations. Eur. Phys. J. B, 2022, 95(9): 142
|
40 |
S. Kitipornchai , X. Q. He , K. M. Liew . Continuum model for the vibration of multilayered graphene sheets. Phys. Rev. B, 2005, 72(7): 075443
|
41 |
G. Mie . Zur kinetischen theorie der einatomigen Körper. Ann. Phys., 1903, 316(8): 657
|
42 |
A. N. Kolmogorov , V. H. Crespi . Smoothest bearings: Interlayer sliding in multiwalled carbon nanotubes. Phys. Rev. Lett., 2000, 85(22): 4727
|
43 |
P. Lou , J. Y. Lee . Electrical control of magnetization in narrow zigzag silicon carbon nanoribbons. J. Phys. Chem. C, 2009, 113(50): 21213
|
44 |
A. N. Kolmogorov , V. H. Crespi . Registry-dependent interlayer potential for graphitic systems. Phys. Rev. B, 2005, 71(23): 235415
|
45 |
D. L. Wood , J. S. Tauc . Weak absorption tails in amorphous semiconductors. Phys. Rev. B, 1972, 5(8): 3144
|
46 |
T. Kamiya , S. Aiba , M. Miyakawa , K. Nomura , S. Matsuishi , K. Hayashi , K. Ueda , M. Hirano , H. Hosono . Field-induced current modulation in nanoporous semiconductor, electron-doped 12CaO∙7Al2O3. Chem. Mater., 2005, 17(25): 6311
|
47 |
W. D. Ma , W. K. Liu , P. Gong , Y. H. Jia , Y. Y. Yang , X. Y. Fang . Effects of different valence atoms on surface passivation of silicon carbide nanowires. Int. J. Mod. Phys. B, 2021, 35(20): 2150207
|
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