Recent advances in laser diode-pumped InnoSlab amplifiers

Abstract

Significant progress has been made in high-power ultrafast laser technology since the development of diode-pumped solid-state laser systems. Three main types of diode-pumped laser systems, InnoSlab, fiber, and thin disk lasers, offer highly efficient cooling geometries that are essential for high-power ultrafast amplifiers. These systems employ amplifier chain configurations customized to their individual geometries, scaling the low-power seed lasers to high power via multi-pass, multi-stage, and regenerative amplification techniques. The partially end-pumped InnoSlab amplifier is distinguished by its slab-shaped gain medium and a highly compact design. This design offers a large surface-to-volume ratio, moderate gain per pass, and reduced nonlinear effects, facilitating the amplification of low-power ultrafast seed laser pulses to kilowatt-level output power at high repetition rates in the multi-MHz range. This review highlights the characteristics of InnoSlab technology and its amplifier configurations, discussing recent advancements in new cavity designs aimed at enhancing gain and beam quality. Additionally, it covers the mechanisms of generating high peak power few-cycle pulses, including non-linear post-pulse compression. The review also explores the potential applications of InnoSlab systems for generating extreme ultraviolet (XUV) and terahertz (THz) frequencies.

Graphical abstract

Keywords

ultrafast lasers / InnoSlab amplifier / multi-pass cell / hybrid resonator / Yb-doped materials

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Declarations

The authors declare that they have no competing interests and there are no conflicts.

Author contributions

All authors have accepted responsibility for the entire content of this manuscript and approved its submission.

Acknowledgements

We are thankful to the National Key Research and Natural Science Foundation of China (Nos. 62105225, 62275174, 61975136, and 61935014), the Development Program of China (No. 2022YFB3605800), the Natural Science Foundation of Top Talent of Shenzhen Technology University (No. GDRC202106), Shenzhen University Stability Support Project (Nos. 20220719104008001 and 20220718173849001), and Guangdong Provincial Engineering Technology Research Center for Materials for Advanced MEMS Sensor Chip (No. 2022GCZX005).

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