Van der Waals interface between high-\kappa dielectrics and 2D semiconductors

Abstract

Atomically thin two-dimensional (2D) semiconductors are attractive channel materials for next-generation field-effect transistors (FETs). The high-performance 2D electronics requires high-quality integration of high-\kappa dielectrics, which however remains a significant challenge. In this mini-review, we provide a brief introduction on recent progress in the van der Waals (vdW) integration of high-\kappa dielectrics onto 2D semiconductors. We first highlight the importance of high-\kappa dielectric integration for 2D FETs. Next, we summarize the recent breakthroughs in the various vdW integrations of high-\kappa dielectrics with 2D semiconductors, along with their interfaces’ properties. Additionally, we examine the quasi-vdW integration of conventional high-\kappa dielectrics onto 2D semiconductors. Finally, we discuss the challenges and potential future research directions in this field.

Graphical abstract

Keywords

two-dimensional semiconductor / high-${\color{khaki}{\kappa }} $ dielectrics / van der Waals interface

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Declarations

The authors declare that they have no competing interests and there are no conflicts.

Acknowledgements

M. Y. acknowledges the funding support from the National Key R&D Program of the Ministry of Science and Technology of China (Project No. 2022YFA1203804), the Hong Kong Polytechnic University (Project Nos. P0034827, P0042711, P0039734, P0039679, URIS2023-050, and URIS2023-052), PolyU RCNN (Project No. P0048122), and Research Grants Council, Hong Kong (Project Nos. P0046939 and P0045061). We thank the computing resources from the National Supercomputer Centre, Singapore. T. Z. was supported by the National Natural Science Foundation of China (Grant No. 12204346).

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