Engineering phonon thermal transport in few-layer PdSe₂

Abstract

Engineering phonon transport in low-dimensional materials has great significance not only for fundamental research, but also for thermal management applications of electric devices. However, due to the difficulties of micro and nano processing and characterization techniques, the work on tuning phonon transport at nanoscale are scarce. In this work, by introducing Ar⁺ plasma, we probed the phonon transport in two-dimensional (2D) layered semiconductor PdSe₂ under different defect concentrations. By using thermal bridge method, the thermal conductivity was measured to decrease by 50% after a certain Ar⁺ irradiation, which implied a possible phase transition. Moreover, Raman characterizations were performed to show that the Raman sensitive peaks of PdSe₂ was red-shifted and finally became disappeared with the increase of defect concentration. “Defect engineering” proves be a practical strategy in tuning the phonon thermal transport in low-dimensional materials, thus providing guidance for potential application in designing thermoelectric devices with various emerging materials.

Graphical abstract

Keywords

phonon transport / PdSe₂ / defects / thermal bridge method

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Declarations

The authors declare that they have no competing interests and there are no conflicts.

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 12204244), the Natural Science Foundation of Jiangsu Province (Grant No. BK20210556), and the Department of Science and Technology of Jiangsu Province (No. BK20220032). Y. S. Zhao acknowledges the support from the Jiangsu Specially-Appointed Professor Program.

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