Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions

Abstract

Two-dimensional transition metal dichalcogenides (TMDs) exhibit promising application prospects in the domains of electronic devices, optoelectronic devices and spintronic devices due to their distinctive energy band structures and spin−orbit coupling properties. Cr-based chalcogenides with narrow or even zero bandgap, covering from semiconductors to metallic materials, have considerable potential for wide-band photodetection and two-dimensional magnetism. Currently, the preparation of 2D CrX_n (X = S, Se, Te) nanosheets primarily relies on chemical vapor deposition (CVD) and molecule beam epitaxy (MBE), which enable the production of high-quality large-area materials. This review article focuses on recent progress of 2D Cr-based chalcogenides, including unique crystal structure of the CrX_n system, phase-controlled synthesis, and heterojunction construction. Furthermore, a detailed introduction of room-temperature ferromagnetism and electrical/optoelectronic properties of 2D CrX_n is presented. Ultimately, this paper summarizes the challenges associated with utilizing 2D Cr-based chalcogenides in preparation strategies, optoelectronics devices, and spintronic devices while providing further insights.

Graphical abstract

Keywords

physical properties / two-dimensional materials / Cr-based chalcogenide / controlled synthesis / heterojunction / eletronic and optoelectronic devices

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Declarations

The authors declare that they have no competing interests and there are no conflicts.

Acknowledgements

This work was financially supported by the Science and Technology Innovation Program of Hunan Province (“HuXiang Young Talents”, Grant No. 2021RC3021), the Natural Science Foundation of Hunan Province, China (Grant No. 2021JJ40780), and the National Natural Science Foundation of China (Grant No. 51902346). This work was also supported by the Open Project Program of Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems (Grant No. 2023SZKF14).

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