Recent developments in CVD growth and applications of 2D transition metal dichalcogenides

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) with fascinating electronic energy band structures, rich valley physical properties and strong spin–orbit coupling have attracted tremendous interest, and show great potential in electronic, optoelectronic, spintronic and valleytronic fields. Stacking 2D TMDs have provided unprecedented opportunities for constructing artificial functional structures. Due to the low cost, high yield and industrial compatibility, chemical vapor deposition (CVD) is regarded as one of the most promising growth strategies to obtain high-quality and large-area 2D TMDs and heterostructures. Here, state-of-the-art strategies for preparing TMDs details of growth control and related heterostructures construction via CVD method are reviewed and discussed, including wafer-scale synthesis, phase transition, doping, alloy and stacking engineering. Meanwhile, recent progress on the application of multi-functional devices is highlighted based on 2D TMDs. Finally, challenges and prospects are proposed for the practical device applications of 2D TMDs.

Graphical abstract

Keywords

two-dimensional (2D) semiconductor / transition metal dichalcogenides (TMDs) / chemical vapor deposition (CVD) / heterostructures / device applications

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Acknowledgements

This work was supported by the National Key R&D Program of China (No. 2018YFA0703700, J.H.), the National Natural Science Foundation of China (Nos. 91964203, J.H., 62004142, Y.W., 62134001, 62104171, R.C., 62104172, L.Y., 62174122, Y.G. and 11774269, S.Y.), the Strategic Priority Research Program of Chinese Academy of Sciences (No. XDB44000000, J.H.), the Natural Science Foundation of Hubei Province, China (Nos. 2021CFB037, R.C. and 2020CFA041, S.Y.), the Fundamental Research Funds for the Central Universities (No. 2042021kf0067, R.C.), and the Special Fund of Hubei Luojia Laboratory.

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