Epitaxial growth of 2D gallium selenide flakes for strong nonlinear optical response and visible-light photodetection

Abstract

As an emerging group III−VI semiconductor two-dimensional (2D) material, gallium selenide (GaSe) has attracted much attention due to its excellent optical and electrical properties. In this work, high-quality epitaxial growth of few-layer GaSe nanoflakes with different thickness is achieved via chemical vapor deposition (CVD) method. Due to the non-centrosymmetric structure, the grown GaSe nanoflakes exhibits excellent second harmonic generation (SHG). In addition, the constructed GaSe nanoflake-based photodetector exhibits stable and fast response under visible light excitation, with a rise time of 6 ms and decay time of 10 ms. These achievements clearly demonstrate the possibility of using GaSe nanoflake in the applications of nonlinear optics and (opto)-electronics.

Graphical abstract

Keywords

2D materials / gallium selenide / second harmonic generation / chemical vapor deposition / photodetector

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Declaration of competing interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

CRediT authorship contribution statement

Mengting Song: Investigation, Experiment, Writing, Validation. Nan An: Co-first authors, Investigation, Experiment, Validation. Yuke Zou: Investigation, Experiment. Yue Zhang: Investigation, Software. Wenjuan Huang: Methodology, Experiment, Supervision. Huayi Hou: Validation. Xiangbai Chen: Writing-reviewing & editing, Supervision.

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 51902227 and 11574241) and the Open Project of State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, China (Grant No. P2020-021).

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