Moisture influence in emerging neuromorphic device

Abstract

Conduction filament formation, redox reaction, and mobile ion migration in solid electrolytes underpin the memristive devices, all of which are partially influenced or fully dominated by the moisture. The moisture-based physical-chemistry mechanism provides an electric tunable method to create enough dissociate conductance states for neuromorphic computing, but overconcentration moisture will corrode electrode and then causes device invalidation. This perspective goal is that surveys the moisture-dependency of dynamic at interfaces or/and switching function layer, clarifies the bottlenecks that the memristive device facing in terms of water molecule-related reaction, and gives the possible solutions.

Graphical abstract

Keywords

memristor / moisture / redox reaction / oxide / interface engineering

References

[1] Z.R. WangC.LiW.H. SongM.Y. RaoD.BelkinY.N. LiP.YanH.JiangP.LinM.HuJ.P. StrachanN.GeM.BarnellQ.WuA.G. BartosQ.R. QiuR.S. WilliamsQ.F. XiaJ.J. Yang, Reinforcement learning with analogue memristor arrays, Nat. Electron. 459(2036), 2 (3), 115 (2019)

[2] Y. F. Pei , Z. Q. Li , B. Li , Y. Zhao , H. He , L. Yan , X. Y. Li , J. J. Wang , Z. Zhao , Y. Sun , Z. Y. Zhou , J. H. Zhao , R. Guo , J. S. Chen , X. B. Yan . A multifunctional and efficient artificial visual perception nervous system with Sb₂Se₃/CdS‐Core/Shell (SC) nanorod arrays optoelectronic memristor. Adv. Funct. Mater., 2022, 32(29): 2203454

[3] Z. C. Zhou , F. Y. Yang , S. Wang , L. Wang , X. F. Wang , C. Wang , Y. Xie , Q. Liu . Emerging of two-dimensional materials in novel memristor. Front. Phys., 2022, 17(2): 23204

[4] C. J. Wan , G. Chen , Y. M. Fu , M. Wang , N. Matsuhisa , S. W. Pan , L. Pan , H. Yang , Q. Wan , L. Q. Zhu , X. D. Chen . An artificial sensory neuron with tactile perceptual learning. Adv. Mater., 2018, 30(30): 1801291

[5] X. Liu , J. Zheng , D. Wang , P. Musavigharavi , E. A. Stach , R. III Olsson , D. Jariwala . Aluminum scandium nitride-based metal-ferroelectric-metal diode memory devices with high on/off ratios. Appl. Phys. Lett., 2021, 118(20): 202901

[6] S.B. JiC.J. WanT.WangQ.S. LiG.ChenJ.W. WangZ.Y. LiuH.YangX.J. LiuX.D. Chen, Water-resistant conformal hybrid electrodes for aquatic endurable electrocardiographic monitoring, Adv. Mater. 32, 2001496 (26) (2020)

[7] N. A. He , Y. M. Sun , D. Z. Wen . Synaptic behavior of Ni-Co layered double hydroxide-based memristor. Appl. Phys. Lett., 2021, 118(17): 173503

[8] S. W. Ke , L. Jiang , Y. F. Zhao , Y. Y. Xiao , B. Jiang , G. Cheng , F. C. Wu , G. S. Cao , Z. H. Peng , M. Zhu , C. Ye . Brain-like synaptic memristor based on lithiumdoped silicate for neuromorphic computing. Front. Phys., 2022, 17(5): 53508

[9] G. D. Zhou , X. D. Yang , L. H. Xiao , B. Sun , A. K. Zhou . Investigation of a submerging redox behavior in Fe₂O₃ solid electrolyte for resistive switching memory. Appl. Phys. Lett., 2006, 96(11): 110404

[10] S. Lee , Y. T. Lee , S. G. Park , K. H. Lee , S. W. Kim , D. K. Hwang , K. Lee . Dimensional crossover transport induced by substitutional atomic doping in SnSe₂. Adv. Electron. Mater., 2018, 4(4): 1700563

[11] B. Gao , J. F. Kang , L. F. Liu , X. Y. Liu , B. Yu . A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect. Appl. Phys. Lett., 2011, 98(23): 232108

[12] G. D. Zhou , Z. Wang , B. Sun , F. Zhou , L. Sun , H. Zhao , X. Hu , X. Peng , J. Yan , H. Wang , W. Wang , J. Li , B. Yan , D. Kuang , Y. Wang , L. Wang , S. Duan . Volatile and nonvolatile memristive devices for neuromorphic computing. Adv. Electron. Mater., 2022, 8(7): 2101127

[13] I. Valov , M. N. Kozicki . Cation-based resistance change memory. J. Phys. D, 2013, 46(7): 074005

[14] L. Goux , I. Valov . Electrochemical processes and device improvement in conductive bridge RAM cells. Phys. Status Solidi. A, 2016, 213(2): 274

[15] F. Messerschmitt , M. Jansen , J. Rupp . When memristance crosses the path with Humidity sensing — About the importance of protons and its opportunities in valence change memristors. Adv. Electron. Mater., 2018, 4: 1800282

[16] L. N. Du , Z. C. Wang , G. Z. Zhao . Novel intelligent devices: Two-dimensional materials based memristors. Front. Phys., 2022, 17(2): 23602

[17] N. Matsuhisa , Y. Jiang , Z. Y. Liu , G. Chen , C. J. Wan , Y. Kim , J. Kang , H. Tran , H. C. Wu , I. You , Z. A. Bao , X. D. Chen . High-transconductance stretchable transistors achieved by controlled gold microcrack morphology. Adv. Electron. Mater., 2019, 5(8): 1900347

[18] Y. M. Sun , D. Z. Wen . Logic function and random number generator build based on perovskite resistive switching memory and performance conversion via flexible bending. ACS Appl. Electron. Mater., 2018, 112: 102905

[19] Z. D. Luo , G. Apachitei , M. M. Yang , J. J. P. Peters , A. M. Sanchez , M. Alexe . Bi-ferroic memristive properties of multiferroic tunnel junctions. Appl. Phys. Lett., 2020, 2: 618

[20] S. Zhu , B. Sun , G. D. Zhou , T. Guo , C. Ke , Y. Chen , F. Yang , Y. Zhang , J. Shao , Y. Zhao . In-depth physical mechanism analysis and wearable applications of HfO_x-based flexible memristors. ACS Appl. Mater. Interfaces, 2023, 15(4): 5420

[21] Z. R. Wang , M. Rao , J. W. Han , J. M. Zhang , P. Lin , Y. Li , C. Li , W. Song , S. Asapu , R. Midya , Y. Zhuo , H. Jiang , J. H. Yoon , N. K. Upadhyay , S. Joshi , M. Hu , J. P. Strachan , M. Barnell , Q. Wu , H. Wu , Q. Qiu , R. S. Williams , Q. Xia , J. J. Yang . Capacitive neural network with neurotransistors. Nat. Commun., 2018, 9(1): 3208

[22] G. D. Zhou , J. G. Wu , L. D. Wang , B. Sun , Z. J. Ren , C. Y. Xu , Y. Q. Yao , L. P. Liao , G. Wang , S. H. Zheng , P. Mazumder , S. K. Duan , Q. L. Song . Evolution map of the memristor: From pure capacitive state to resistive switching state. Nanoscale, 2019, 11(37): 17222

[23] Z.C. ZhouF.Y. YangS.WangL.WangX.F. WangC.WangY.XieQ.Liu, Emerging of two-dimensional materials in novel memristor, Front. Phys. 17(2), 14, 23204 (2022)

[24] X. B. Yan , H. D. He , G. J. Liu , Z. Zhao , Y. F. Pei , P. Liu , J. H. Zhao , Z. Y. Zhou , K. Y. Wang , H. W. Yan . A robust memristor based on epitaxial vertically aligned nanostructured BaTiO₃−CeO₂ films on silicon. Adv. Mater., 2022, 34(23): 2110343

[25] G. D. Zhou , B. Sun , X. Hu , L. Sun , Z. Zou , B. Xiao , W. Qiu , B. Wu , J. Li , J. Han , L. Liao , C. Xu , G. Xiao , L. Xiao , J. Cheng , S. Zheng , L. Wang , Q. Song , S. Duan . Negative photoconductance effect: An extension function of the TiO_x‐based memristor. Adv. Sci. (Weinh.), 2021, 8(13): 2003765

[26] Z. R. Wang , S. Joshi , S. Savel’ev , W. H. Song , R. Midya , Y. N. Li , M. Y. Rao , P. Yan , S. Asapu , Y. Zhuo , H. Jiang , P. Lin , C. Li , J. H. Yoon , N. K. Upadhyay , J. Zhang , M. Hu , J. P. Strachan , M. Barnell , Q. Wu , H. Wu , R. S. Williams , Q. Xia , J. J. Yang . Fully memristive neural networks for pattern classification with unsupervised learning. Nat. Electron., 2018, 1(2): 137

[27] X. Hu , W. Wang , B. Sun , Y. Wang , J. Li , G. Zhou . Refining the negative differential resistance effect in a TiO_x-based memristor. J. Phys. Chem. Lett., 2021, 12(22): 5377

[28] W. Wang , G. D. Zhou , Y. Wang , B. Sun , M. Zhou , C. Fang , C. Xu , J. Don , F. Wang , S. Duan , Q. L. Song . An analogue memristor made of silk fibroin polymer. J. Mater. Chem. C, 2021, 9(41): 14583

[29] I. Valov , T. Tsuruoka . Effects of moisture and redox reactions in VCM and ECM resistive switching memories. J. Phys. D, 2018, 51(41): 413001

[30] A. V. Valov , S. V. Golovin , V. V. Shcherbakov , D. S. Kuznetsov . Thermoporoelastic model for the cement sheath failure in a cased and cemented wellbore. J. Petrol. Sci. Eng., 2022, 210: 109916

[31] T. Guo, J. Ge, Y. Jiao, Y. Teng, B. Sun, W. Huang, H. Asgarimoghaddam, K. P. Musselman, Y. Fang, Y. N. Zhou, and Y. A. Wu, Intelligent matter endows reconfigurable temperature and humidity sensations for in-sensor computing, Mater. Horiz., doi: 10.1039/D2MH01491B (2023)

[32] B. Sun , Y. Chen , M. Xiao , G. Zhou , S. Ranjan , W. Hou , X. Zhu , Y. Zhao , S. A. T. Redfern , Y. N. Zhou . A unified capacitive-coupled memristive model for the nonpinched current-voltage hysteresis loop. Nano Lett., 2019, 19(9): 6461

[33] G. D. Zhou , Z. Ren , B. Sun , J. Wu , Z. Zou , S. Zheng , L. Wang , S. Duan , Q. Song . Capacitive effect: An original of the resistive switching memory. Nano Energy, 2020, 68: 104386

[34] F. Messerschmitt , M. Kubicek , J. L. M. Rupp . How does moisture affect the physical property of memristance for anionic-electronic resistive switching memories. Adv. Funct. Mater., 2015, 25(32): 5117

[35] G. Zhou , S. Duan , P. Li , B. Sun , B. Wu , Y. Yao , X. Yang , J. Han , J. Wu , G. Wang , L. Liao , C. Lin , W. Hu , C. Xu , D. Liu , T. Chen , L. Chen , A. Zhou , Q. Song . Coexistence of negative differential resistance and resistive switching memory at room temperature in TiO_x modulated by moisture. Adv. Electron. Mater., 2018, 4(4): 1700567

[36] T. Tsuruoka , I. Valov , S. Tappertzhofen , J. van den Hurk , T. Hasegawa , R. Waser , M. Aono , Redox reactions at Cu . Ag/Ta₂O₅ interfaces and the effects of Ta₂O₅ film density on the forming process in atomic switch structures. Adv. Funct. Mater., 2015, 25(40): 6374

[37] G. Milano , M. Luebben , M. Laurenti , L. Boarino , C. Ricciardi , I. Valov . Structure-dependent influence of moisture on resistive switching behavior of ZnO thin Films. Adv. Mater. Interfaces, 2021, 8(16): 2100915

[38] M. Lübben , S. Wiefels , R. Waser , I. Valov . Processes and effects of oxygen and moisture in resistively switching TaO_x and HfO_x. Adv. Electron. Mater., 2018, 4(1): 1700458

[39] Y. Li , Y. Gao . Interplay between water and TiO₂ anatase (101) surface with subsurface oxygen vacancy. Phys. Rev. Lett., 2014, 112(20): 206101

[40] M. Lübben , S. Menzel , S. G. Park , M. Yang , R. Waser , I. Valov . Set kinetics of electrochemical metallization cells: Influence of counter-electrodes in SiO₂/Ag based systems. Nanotechnology, 2017, 28(13): 135205

[41] F. Zhou , Z. Zhou , J. Chen , T. H. Choy , J. Wang , N. Zhang , Z. Lin , S. Yu , J. Kang , H. P. Wong , Y. Chai . Optoelectronic resistive random-access memory for neuromorphic vision sensors. Nat. Nanotechnol., 2019, 14(8): 776

[42] Y. F. Liu , L. Yobas . Microfluidic emulsification through a monolithic integrated glass micronozzle suspended inside a flow-focusing geometry. Appl. Phys. Lett., 2015, 106(17): 174101

[43] S. Tappertzhofen , I. Valov , T. Tsuruoka , T. Hasegawa , R. Waser , M. Aono . Generic relevance of counter charges for cation-based nanoscale resistive switching memories. ACS Nano, 2013, 7(7): 6396

[44] T. Tsuruoka , K. Terabe , T. Hasegawa , I. Valov , R. Waser , M. Aono . Effects of moisture on the switching characteristics of oxide-based, gapless-type atomic switches. Adv. Funct. Mater., 2012, 22(1): 70

[45] M. D. Pickett , G. Medeiros-Ribeiro , R. S. Williams . A scalable neuristor built with Mott memristors. Nat. Mater., 2013, 12(2): 114

[46] I. Valov , E. Linn , S. Tappertzhofen , S. Schmelzer , J. van den Hurk , F. Lentz , R. Waser . Nanobatteries in redox-based resistive switches require extension of memristor theory. Nat. Commun., 2013, 4(1): 1771

[47] I. Valov , R. Waser , J. R. Jameson , M. N. Kozicki . Electrochemical metallization memories-fundamentals, applications, prospects. Nanotechnology, 2011, 22(25): 254003

[48] G. D. Zhou , X. Ji , J. Li , F. Zhou , Z. Dong , B. Yan , B. Sun , W. Wang , X. Hu , Q. Song , L. Wang , S. Duan . Second-order associative memory circuit hardware implemented by the evolution from battery-like capacitance to resistive switching memory. iScience, 2022, 25(10): 105240

[49] X. Hong , J. Hoffman , A. Posadas , K. Zou , C. H. Ahn , J. Zhu . Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr_0.2Ti_0.8)O₃. Appl. Phys. Lett., 2010, 97(3): 033114

[50] Z. Guo , Y. D. Guan , Q. Luo , J. M. Hong , L. You . Ferroelectric-nanocrack switches for memory and complementary logic with zero off-current and low operating voltage. Adv. Electron. Mater., 2021, 7(6): 2100023

[51] Q. Kang , C. Wang , S. Zhou , G. Li , T. Lu , Y. Tian , P. He . Low-temperature co-hydroxylated Cu/SiO₂ hybrid bonding strategy for a memory-centric chip architecture. ACS Appl. Mater. Interfaces, 2021, 13(32): 38866

[52] N. Pedisius , M. Praspaliauskas , J. Pedisius , E. Dzenajaviciene . Analysis of wood chip characteristics for energy production in lithuania. Energies, 2021, 14(13): 3931

[53] M. Hu , C. E. Graves , C. Li , Y. Li , N. Ge , E. Montgomery , N. Davila , H. Jiang , R. S. Williams , J. J. Yang , Q. Xia , J. P. Strachan . Memristor-based analog computation and neural network classification with a dot product engine. Adv. Mater., 2018, 30(9): 1705914

[54] M. J. Jr Ellsworth , G. F. Goth , R. J. Zoodsma , A. Arvelo , L. A. Campbell , W. J. Anderl . An overview of the IBM power 775 supercomputer water cooling system. J. Electron. Packag., 2012, 134(2): 020906

[55] G. Milano , E. Miranda , M. Fretto , I. Valov , C. Ricciardi . Experimental and modeling study of metal-insulator interfaces to control the electronic transport in single nanowire memristive devices. ACS Appl. Mater. Interfaces, 2022, 14(47): 53027

[56] O. C. Akgun , K. Nanbakhsh , V. Giagka , W. A. Serdijn . A chip integrity monitor for evaluating moisture/ion ingress in mm-sized single-chip implants. IEEE Trans. Biomed. Circuits Syst., 2020, 14(4): 658

[57] C. Mannequin , T. Tsuruoka , T. Hasegawa , M. Aono . Composition of thin Ta₂O₅ films deposited by different methods and the effect of humidity on their resistive switching behavior. Jpn. J. Appl. Phys., 2016, 55(6S1): 06GG08

[58] G. D. Zhou , B. Sun , Z. J. Ren , L. D. Wang , C. Y. Xu , B. Wu , P. Li , Y. Q. Yao , S. Duan . Resistive switching behaviors and memory logic functions in single MnO_x nanorod modulated by moisture. Chem. Commun. (Camb.), 2019, 55(67): 9915

[59] G. D. Zhou , Z. Ren , L. Wang , J. Wu , B. Sun , A. Zhou , G. Zhang , S. Zheng , S. Duan , Q. Song . Resistive switching memory integrated with amorphous carbonbased nanogenerators for self-powered device. Nano Energy, 2019, 63: 103793

[60] J. Li , Y. Qian , W. Li , Y. Lin , H. Qian , T. Zhang , K. Sun , J. Wang , J. Zhou , Y. Chen , J. Zhu , G. Zhang , M. Yi , W. Huang . Humidity-enabled organic artificial synaptic devices with ultrahigh moisture resistivity. Adv. Electron. Mater., 2022, 8(10): 2200320

[61] X. Ji , Z. Dong , C. Lai , G. Zhou , D. Qi . A physics-oriented memristor model with the coexistence of NDR effect and RS memory behavior for bio-inspired computing. Mater. Today Adv., 2022, 16: 100293

Acknowledgements

This work was supported by the Fundamental Research Funds for the Central Universities (Grant No. SWU020019), Natural Science Foundation of Chongqing (Grant No. cstc2020jcyj-msxm X0648), and Natural Science Foundation of Guizhou Province ([2020]1Y024).

RIGHTS & PERMISSIONS

2023 Higher Education Press