Enhancing thermal transport in multilayer structures: A molecular dynamics study on Lennard−Jones solids

Cuiqian Yu, Yulou Ouyang, Jie Chen

Front. Phys. ›› 2022, Vol. 17 ›› Issue (5) : 53507.

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Front. Phys. ›› 2022, Vol. 17 ›› Issue (5) : 53507. DOI: 10.1007/s11467-022-1170-5
RESEARCH ARTICLE
RESEARCH ARTICLE

Enhancing thermal transport in multilayer structures: A molecular dynamics study on Lennard−Jones solids

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Abstract

We investigate the thermal transport properties of three kinds of multilayer structures: a perfect superlattice (SL) structure, a quasi-periodic multilayer structure consisted of two superlattice (2SL) structures with different periods, and a random multilayer (RML) structure. Our simulation results show that there exists a large number of aperiodic multilayer structures that have effective thermal conductivity higher than that of the SL counterpart, showing enhancement ratio in the effective thermal conductivity up to 193%. Surprisingly, some RML structures also exhibit enhanced thermal transport than the SL counterpart even in the presence of phonon localization. The detailed analysis on the underlying mechanism reveals that such peculiar enhancement is caused by the synergistic effect of coherent and incoherent phonon transport, which can be tuned by the structural configuration. Combined with molecular dynamics simulations and the machine learning technique, we further reveal that the enhancement effect of the effective thermal conductivity by 2SL structure is more significant when the period of SL structure is close to the critical transition period between the coherent and incoherent phonon transport regimes. Our study proposes a novel strategy to enhance the thermal transport in multilayer structures by regulating the wave-particle duality of phonons via the structure optimization, which might provide valuable insights to the thermal management in devices with densely packed interfaces.

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Keywords

multilayer structures / thermal conductivity / machine learning / molecular dynamics simulation / wave-particle duality of phonon

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Cuiqian Yu, Yulou Ouyang, Jie Chen. Enhancing thermal transport in multilayer structures: A molecular dynamics study on Lennard−Jones solids. Front. Phys., 2022, 17(5): 53507 https://doi.org/10.1007/s11467-022-1170-5

1 Introduction

Heat conduction in low-dimensional materials [1-5] has attracted recent interests for the applications in thermal management [6,7] and thermoelectrics [8,9]. Among them, periodic structures have been extensively investigated recently due to the wave-particle duality of phonons [10-20]. For instance, Luckyanova et al. [10] found that the experimentally measured thermal conductivity κ of GaAs/AlAs superlattice (SL) increases almost linearly with length. The experimental study by Ravichandran et al. [11] further reveals the transition from incoherent to coherent phonon transport in SL structure when the interface density increases. Moreover, due to the coherent interference between phonons in SL structure, the total-transmission and total-reflection of individual phonons can be achieved in the presence of interfaces [14].
As certain level of mixing or roughness at the interface can often be introduced during the synthesis process of superlattice structure in experiment, the impact of interfacial mixing or roughness on the thermal transport in superlattice structure has also been investigated [21-23]. For instance, Huberman et al. [21] found that roughness or species mixing at the interface of superlattice structure leads to the reduction of thermal conductivity by suppressing the coherent phonon transport. In contrast to the non-monotonic dependence on the period length observed in perfect superlattice structure [11], thermal conductivity of the superlattice with roughness increases monotonically with the period length [22].
The miniaturization of nano-electronic devices has faced severe heat dissipation issue [24] due to the significantly enhanced interface density. Moreover, thermal management is also extremely important for the battery systems [25]. For the multilayer structures under the same system length and interface density, the periodic arrangement of interfaces in perfect SL structure seems to be the best option for heat conduction, since a suppressed thermal transport has been observed in various studies when introducing randomness to the perfect periodic structures due to the emergence of phonon localization [23,26-30]. Surprisingly, very limited counter-examples have been reported in recent studies [31,32]. For instance, Wei et al. [31] found that κ of a few aperiodic nanoporous graphene structures is abnormally higher than that of the periodic counterparts, although their study was based on Boltzmann transport equation method which ignores the wave characteristics of phonons. Another example is the simulation work by Chakraborty et al. [32] that they found κ of the one-dimensional (1D) multilayer structures does not decrease monotonically with increasing degree of randomness. These studies suggest that there might exist other competing mechanisms besides Anderson localization for the abnormally enhanced κ. However, only a small portion of the design space has been explored in previous studies. Besides, whether the observed enhanced thermal transport in aperiodic structure compared to the SL structure is a general feature in multilayer structure, and more importantly, the physical mechanism behind the enhanced thermal transport in aperiodic structure remains unclear.
To answer this question, it requires the search for the optimized configuration with maximized thermal transport ability among various 1D multilayer structures under the condition of the same interface density, which is a very challenging task for the traditional trial-and-error research procedures due to a huge amount of configurations in the design space. Fortunately, the machine learning (ML) technique has been demonstrated as a powerful tool to identify the optimized candidate for achieving targeted material properties [33-42].
In this work, we systematically examine the possibility for enhancing thermal transport in 1D multilayer structures via the structure optimization. Based on the molecular dynamics (MD) simulations, we observe that there exists a large number of aperiodic multilayer structures (even with randomly distributed interfaces) whose effective κ is higher than that of SL counterpart, under the condition of same interface density. The physical mechanism responsible for this abnormal enhancement is discussed in detail. Furthermore, the ML technique is applied to explore this abnormal feature in the whole design space and generalize the conclusion. Our work proposes a novel strategy to achieve enhanced thermal transport in multilayer structures by redistributing the interfaces and utilizing the coherent phonon transport.

2 Methods

2.1 Multilayer structures

Our target is to identify the optimized multilayer structure with maximized thermal transport ability better than the perfect SL structure, given the same interface density. Due to the transition from incoherent to coherent phonon transport, κ of SL structures [11,26] will first decrease and then increase with the decrease of SL’s period length P0, exhibiting a minimum thermal conductivity at a critical transition period length Pt. An intuitive guess is that a combination of two SL structures with periods in two different transport regimes might have higher thermal conductivity than the perfect SL structure at Pt. Therefore, we consider three kinds of multilayer structures in this study: a perfect SL structure [Fig.1(a)], a combination of two SL structures (referred as 2SL in this work) with different periods [Fig.1(b)], and a random multilayer structure (RML) by introducing randomness to 2SL structure [Fig.1(c)]. For these three kinds of structures, we fix the total length L and the total number of interfaces so that the interface density is the same for all structures.
Fig.1 Schematic graphs for the three types of multilayer structures and NEMD setup. The dark and light regions represent material A and B, respectively. (a) SL structure with period length of P0 and number of layers of N0. (b) 2SL structure combined by two SL structures with different period lengths (P1 and P2) and number of layers (N1 and N2). R1 is the ratio of the left region. (c) RML structure. (d) Schematic setup for the NEMD simulations.

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To build the SL structure, two conceptual materials A and B are considered and both of them have the conventional argon face-centered-cubic lattice structure with the same lattice constant of 5.23 Å. Here we define the unit cell (UC) length of argon as the length unit (UC = 5.23 Å). The value of Pt can be influenced by mass mismatch and the interatomic potential parameters between materials A and B. In this work, the masses of material A and B are equal to that of argon and the only difference between them is the interatomic potential parameters. The detailed selection basis for the parameters can be found in supporting information (SI) (see Figs. S5 and S6 in SI). All structures are constructed by stacking UC of material A and B along the [100] direction. The SL structure [Fig.1(a)] is constructed by alternately stacking material A and B with the same thickness, in which P0is the period length and N0 is the number of the layers (A or B). The 2SL structure [Fig.1(b)] is a combination of two SL structures with different period lengths (P1 and P2) and number of layers (N1 and N2). To guarantee the same interface density, we keep N0=N1+N2. The RML structure is constructed based on the 2SL structure. Two layers are randomly selected from the left and right region of 2SL structure, respectively, and their positions are then swapped [22,30,32]. Note that these two layers selected in two regions must be of the same material to ensure that the total number of interfaces does not change after swapping. Such random swapping procedure is repeated S _num times to build the RML structure. In this work, S _num is set as 5000 to ensure the convergence of computed thermal transport properties of RML structure (see Section 2 in SI).

2.2 MD simulations

MD simulation is adopted in this work to study the thermal transport properties. Compared to the atomistic Green's function method and Boltzmann transport equation used in previous studies [31,34], MD simulations can consider both the full order of anharmonic phonon-phonon scatterings [42] and wave characteristics of phonons [43,44]. All non-equilibrium molecular dynamics (NEMD) simulations are performed using the LAMMPS [45]. The timestep is set as 1 fs. The interatomic interaction is described by the Lennard−Jones (LJ) potential E(rij)=4ϵ[(σrij)12(σrij)6]. The ϵ for material A and B is set as 0.0416 eV and 0.1664 eV, respectively, which is chosen from a previous study [22] in order to ensure a large transition period between the coherent and incoherent transport regimes. The σ is set as 0.34 nm for both material A and B, and the cutoff distance is 2.5 σ. Previous studies [26,30] reveal that the two-body LJ potential and many-body Tersoff potential actually capture essentially the same underlying physics regarding in the coherent and incoherent phonon transport in superlattice and disordered structures. Therefore, the merit of LJ potential is that it can capture the underlying physics with a simplified model. In this study, we focus on this LJ model system to study the control mechanism of κ for multilayer structures. The same strategy has been widely used in literature studies [22,30,32,46-48].
After constructing the structure, the whole system is first relaxed in the isothermal-isobaric ensemble with the periodic boundary condition applied in all directions. Then, NEMD simulations are performed according to the setup shown in Fig.1(d). At both ends of the simulation domain, a boundary layer of 2 nm in thickness is frozen as the fixed boundary. The structure under study (SL, 2SL, or RML) is sandwiched between a hot heat bath with temperature Th and a cold bath with temperature Tc. Atoms in the heat baths are chosen to have the same atom type as the atoms in the neighboring layer next to the heat baths to minimize the temperature difference between the heat bath and central conduction region. Nosé−Hoover heat bath with a length of 4 nm is used at each end of the simulation domain. The temperatures of two heat bath are set atTh = 35 K and Tc = 25 K, unless specified otherwise. Finally, we perform NEMD simulations long enough (~10 ns) to obtain the steady state heat flux and temperature profile.
As all three types of structures considered in our study is not homogeneous, and temperature discontinuity exists at the various interfaces inside each structure. Strictly speaking, a homogeneous thermal conductivity cannot be defined from the Fourier’s law for these inhomogeneous systems, especially for 2SL and RML structure. In order to compare the heat transport ability of these inhomogeneous structures, we select the same length for all structures and define the effective thermal conductivity for the inhomogeneous structure as
κeff=JLSΔT,
where J is the steady state heat current computed from the energy change rate in the heat bath, L is the length of the central conduction region, S is the cross-sectional area, and ΔT is the temperature difference between the hot bath and cold bath. The same approach has been widely used in the study on thermal transport properties of multilayer structures [30,32,49].

2.3 Transmission calculation

With the mode analysis [50-54], the spectral contribution to thermal transport can be obtained. In this regard, we calculate the frequency-resolved phonon transmission across an imaginary interface in each structure as [51,52]
Γ(ω)=2kBΔTRekljr+dτeiωτFjk(τ)vj(0),
where kB is the Boltzmann constant, Fjk is the interatomic force between atom j on left side of the imaginary interface and atom k on the right side of the imaginary interface, and vj is the velocity of atom j. This method has the advantage to take into account the anharmonic effect on the transmission coefficient [51,52], which is ignored in the Green’s function approach. Therefore, it has been widely used to study the thermal transport mechanism in various systems [47,55-57].

3 Results and discussion

3.1 Impact of different structures

From the P0−κ relationship in pure SL (see Fig. S1 in SI), we can see that phonon transport transits from incoherent diffusive phonon transport dominant regime to the coherent phonon wave transport dominant regime as P0 decreases. Most of the phonons behave as coherent waves when P0 is smaller than the critical transition period Pt. In the coherent phonon dominant heat transport regime, phonons can travel coherently without losing phase information [58]. In this regime, κ in SL structure decreases with increasing P0 because of the reduced group velocity and the increase of band gaps [59,60]. Meanwhile, coherent phonons have the unique characteristics that they can travel through the interfaces as a wave rather than being scattered by the interfaces [30]. In the incoherent phonon dominant heat transport regime, the interface scattering leads to the phase breaking and decrease of phonon relaxation time [38,58], and κ in SL structure decreases with decreasing P0 due to the enhanced interface density and consequently the enhanced incoherent phonon scattering.
In this section, we study three forms of multilayer structures with the same total length (L = 1024 UC) and number of interfaces (N0 = N1+ N2) through the traditional MD simulations. Note that size effect has been tested in SI (see Figs. S3 and S4 in SI). In our model, we choose P0, P1 and P2 as integer numbers of UC, and P1 is always smaller than P2. To maintain the same L and N0, the following relationship must be satisfied: P1 < P0 < P2. The Pt is a signature of the transition from the particlelike (incoherent) regime to the wavelike (coherent) regime. In this work, we select the model with Pt = 8 UC and the corresponding parameters are listed in SI (see Fig. S8 in SI). TheP0of SL in this work varies from 4−1024 UC. In the following part, we discuss three different cases: (i)P0 = Pt, (ii) P0 < Pt and (iii) P0 > Pt.
First, we study the most special case that P0 = Pt = 8 UC. To ensure the same interface density as SL structure, the parameters in 2SL structure must satisfy the following condition: P1 < Pt <P2. In this case, the left region of 2SL is dominated by coherent phonons and the right region of 2SL is dominated by incoherent phonons. Here we use κl and κr to denote the thermal conductivity for the left and right region, respectively. Since P0 = Pt, both κl and κr in 2SL are larger than that of SL because of the relationship betweenP0and κeff (see Fig. S8 in SI). The simulation results shown in Fig.2(a) indeed confirms that κeff of most 2SL structures is larger than that of the corresponding SL (dashed line), especially for the case with small P1 value. The enhancement ratio, Δ=κeff2SL/RMLκeffSLκeffSL, can even reach up to 193%. For P1 = 6 UC, κeff of 2SL is only slightly lower than that of the corresponding SL when the ratio of the left region R1 is small, which suggests that the interfacial thermal resistance between the left and right region is negligible compared to the thermal resistance of each region in 2SL structure.
Fig.2 The relationship between the ratio of the left region R1 in 2SL and κeff of multilayer structures with that the P0 of the corresponding SL is (a) 8 UC, (b) 4 UC, (c) 16 UC and (d) 16 UC. TheP1 of 2SL in (a), (b), (c) is smaller than the transition period lengthPt = 8 UC, while P1 in (d) is larger thanPt. The dashed lines in each plot denote the thermal conductivity of corresponding SL with the same interface density. Here Th= 35 K and Tc= 25 K are used in the simulations.

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According to the constraint that N0 and L are constant, the increase of R1 for each P1 leads to the increase of N1 and decrease of N2, and consequently the increase of P2, which means that the difference between P1and P2 is enhanced. Fig.2(a) shows that κeff of 2SL structure increases monotonically with R1for each P1. With the increase of R1 in the left region of 2SL structure, more coherent phonons form and participate in phonon transport. At the same time, increasing R1 results in the decrease of N2 in the right region, which consequently reduces the scattering of incoherent phonons. Therefore, the synergistic effect of coherent phonons and incoherent phonons results in the increase of κeff with R1for each P1 in 2SL structure. In other words, increasing the length ratio of coherent dominated left region can enhance the thermal transport in 2SL structure.
Furthermore, Fig.2(a) also shows that a larger P1of 2SL leads to a smaller enhancement in κeff compared to that of SL structure. The constraint of constant L and N0 means that increasing P1is achieved by decreasing P2. Therefore, both κl and κr in 2SL decrease with increasing P1 (see Fig. S8 in SI). Combined with the negligible interfacial thermal resistance between the left region and right region, 2SL structure with a large P1 owns a relatively low κeff.
RML can be considered as a random structural disturbance, which can destroy the wave nature (coherence) of the phonons and cause the phonon localization phenomenon [22, 23, 26, 32, 38, 61]. The phonon localization effect will inhibit the phonon transport [28,62] and consequently cause the reduction of thermal conductivity. This point can be observed in Fig.2(a) that κeff of RML structure (empty symbols) is obviously lower than that of the corresponding 2SL structure (solid symbols). Very interestingly, κeff of certain RML structure (see for instance, P1= 2 UC) is still larger than that of the corresponding SL structure, despite the localization induced reduction of thermal conductivity in RML. This peculiar behavior highlights the importance of coherent phonon transport for enhancing thermal transport compared to the SL structure even in the presence of randomness.
The second case is that P0 < Pt, corresponding to the situation that the SL structure is in the coherent phonon dominant regime. This condition yields two possible situations: P1<P2<Pt or P1 < Pt < P2. For the situation P1<P2 < Pt, both the left and right regions in 2SL are dominated by coherent phonons. However, since there is only one such 2SL structure satisfying this condition (P1 = 2 UC, N1 = 256, P2 = 6 UC, N2 = 256) in our structure library, we do not consider this special case in our study, due to the rigor of statistical physics. Another situation is thatP1<Pt < P2. Here we consider SL with P0 = 4 UC, and the corresponding 2SL and RML with P1= 2 UC. As shown in Fig.2(b), κeff of 2SL in this case also increases monotonically with the increase of R1, since the same condition (P1 < Pt < P2) is satisfied as that in Fig.2(a). Moreover, κeff of all 2SL structures in Fig.2(b) is larger than that of corresponding SL (dashed line), especially for structure with large R1. The maximum enhancement ratio Δ = 161%, which is smaller than that in Fig.2(a) ( Δ = 193%). When random layers are introduced, κeff of RML is reduced compared to that of 2SL, but there still exists a large number of RML structures (when R1> 0.45) with κeff larger than that of corresponding SL structure.
The last case is that P0 > Pt, corresponding to the situation that the SL structure is in the incoherent phonon dominant regime. Two possible situations are P1 < Pt< P2or Pt < P1 < P2. Here we take samples with P0= 16 UC as objects of study. When P1 < Pt< P2, we also observe in Fig.2(c) an increasing trend of κeff in 2SL as R1 increase for each P1. The maximum enhancement ratio of κeff relative to SL can reach by up to Δ = 171%, which is smaller than that in Fig.2(a) ( Δ = 193%). This is because there are fewer coherent phonons in 2SL for a largerP0. Consequently, the reduction of κeff from 2SL to RML structure in Fig.2(c) is smaller than that of Fig.2(a).
When the situation turns to that Pt < P1<P2, both the left and right regions in 2SL are dominated by incoherent phonons. In this configuration, there are still some 2SL structures with κeff higher than SL counterpart (see Section 3 in SI). However, the maximum enhancement ratio in Fig.2(d) ( Δ = 39%) is much smaller than that in Fig.2(c) ( Δ = 171%). So far, we can conclude that the presence of coherent phonons is a key factor leading to the increase of κeff. Notice that the coherent phonon contribution in the incoherent regime might not be negligible when P0 is close to Pt [26]. Therefore, when the randomness is introduced, κeff of RML is still reduced compared to that of 2SL when P0= 16 UC. When P0is much larger than Pt, the difference in κeff between RML and corresponding 2SL is very small due to the negligible coherent phonon transport (see Section 4 in SI).
To further understand the influence of structural configuration on thermal transport, we compute the phonon transmission across an imaginary interface for a typical set of SL, 2SL and RML structures. Here we consider P0 = 8 UC for SL structure, and P1 = 2 UC, N1 = 255, P2 = 1538 UC, N2 = 2 for 2SL and RML structures. The imaginary interface in 2SL is between the left and right regions, while it is at approximately the interface near the center of the sample for SL and RML structures. The atomic velocity and force in the region with thickness of 1 nm on each side of the imaginary interface are recorded to compute the transmission coefficient. Although the location of the imaginary interface is different for different structures, this does not affect the result of the phonon transmission spectrum because the spectrum decomposition is insensitive to the exact position of the interface in the steady state [51].
Fig.3 shows that the phonon transmission in our system is dominated by phonons below 7 THz. There are two dominant peaks (around 3 THz and 4 THz) in the phonon transmission spectrum for all structures. The 2SL structure has the largest transmission coefficient for these two peaks, while the SL structure has the lowest transmission coefficient. This results are consistent with the independent NEMD calculations of κeff for these three structures (SL: 3.86 W·m−1·K−1, 2SL: 11.30 W·m−1·K−1, and RML: 7.11 W·m−1·K−1). The phonon transmission calculation reveals that the introduction of coherent phonon transport in SL structure can notably promote the phonon transmission for the dominant peaks, leading to the enhanced κeff in 2SL structure compared to that in SL structure.
Fig.3 The transmission spectra of a typical set of SL, 2SL and RML. The configurations of the three structures are set as follows: P0 = 8 UC for SL structure, and P1 = 2 UC, N1 = 255, P2 = 1538 UC, N2 = 2 for 2SL and RML structures. Here Th= 35 K and Tc= 25 K are used in the simulations.

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Temperature can affect the thermal transport in crystalline materials through the anharmonic phonon-phonon interactions [63,64]. In order to further explore the validity of the above-mentioned enhancement of κeff by aperiodic multilayer structures at different temperatures, we repeat the simulations for a typical set (P0 = 8 UC and P1 = 2 UC) of 2SL and RML structures at various temperatures. Fig.4 shows the calculation results of κeff versus the ratio R1 for this set of 2SL and RML structures at various temperatures. The κeff of corresponding SL is 3.86 W·m−1·K−1 at 30 K, 3.54 W·m−1·K−1 at 50 K, and 3.06 W·m−1·K−1 at 80 K. A similar increasing trend of κeff with the increase of R1 is observed at different temperatures, which confirms that the enhancement of thermal conductivity by 2SL and RML structures is valid at different temperatures and the optimal structure with maximum enhancement ratio keeps the same (the large R1 limit). Moreover, for a given R1 ratio, the κeff of 2SL structures decreases with increasing temperature, due to the enhanced anharmonic phonon scattering. Although the κeff of corresponding SL is also reduced with increasing temperature, we find the maximum enhancement ratio Δ=κeff2SLκeffSLκeffSL for the optimal structure is actually smaller at higher temperatures (193% at 30 K, 157% at 50 K, 134% at 80 K), which suggests that such enhancement strategy by aperiodic structure works better at lower temperature due to the stronger coherent phonon transport.
Fig.4 The relationship between the ratio R1 and κeff in a particular set of 2SL and RML multilayer structures at various temperatures. Here P0= 8 UC and P1= 2 UC are used in the simulations, and the temperature denotes the average temperature of two heat baths. The κeff of corresponding SL is 3.86 W·m−1·K−1 at 30 K, 3.54 W·m−1·K−1 at 50 K, and 3.06 W·m−1·K−1 at 80 K. The maximum enhancement ratio Δ for the optimal structure is 193% at 30 K, 157% at 50 K, and 134% at 80 K.

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3.2 Predictions based on machine learning

So far, we have demonstrated for a limited number of structures that it is indeed possible to find alternative structures with higher κeff than that of SL structure, given the same length and interface density. In the whole design space, there are 1105 and 16735 2SL structures corresponding to the situations that P1 < 8 UC and P1 > 8 UC, respectively (see Fig. S2 in SI). Accordingly, the number of the corresponding RML in the structure library is 17840. Therefore, there are 35680 structures in our structure library. Since the computational cost for each structure is about 160 core hours by NEMD simulations, such huge structure library makes it extremely challenging to explore the whole design space. In order to further verify whether the enhanced thermal transport is a general feature in the whole structure library, we resort to ML technique to predict κeff of all structures in the whole design space.
The training set of ML needs to be large enough to ensure the accuracy of prediction and avoid the occurrence of overfitting, which can improve the generalization ability of ML predictions. To ensure enough 2SL structures, Pt should be sufficiently large, which can be achieved by selecting appropriate simulation parameters (see Section 1 in SI). Our targeted construction method enables us to consider the coherent phonon transport more effectively. Through optimal parameter selection (see Figs. S3−S7 in SI), we set the cross section as 3 UC × 3 UC andL = 1024 UC with a negligible 5% error tolerance for all structures in our calculations. The LJ parameters for Ar are ϵAr = 0.0104 eV and σAr = 0.34 nm, respectively [22]. The ϵ of material A and B is 4 and 16 times of ϵAr, and the σ of material A and B is the same as that for argon. The cutoff radius is set as 2.5 σAr. In all structures, the mass of materials A and B are both 40 g/mol, which is the mass of argon. The ambient temperature considered in our work is 30 K.
Prediction performance in ML depends not only on the completeness of the initial input data, but also on the selection of algorithms and descriptor dataset. Inspired by the recent successes of traditional ML algorithms [65-69], we examine various ML algorithms by comparing the coefficient of determination (R2), mean squared error (MSE), root mean squared error (RMSE). R2, MSE and RMSE of Gradient Boosting Decision Tree (GBDT) [70] for the test dataset are 0.92, 0.39 and 0.63, which demonstate that GBDT is the best prediction algorithm (see Figs. S11 and S12 in SI). The descriptor dataset here consists of L, P0, P1, N1, P2, N2, R1, S _num, which can describe the various structures in detail (see Fig. S13 in SI). Therefore, the GBDT algorithm is used to predict κeff of all structures, with detailed method described in SI (see Fig. S14 in SI).
To explore the general relationship between κeff and structure arrangement, the ML predicted κeff for all 2SL and RML structures with the configuration that P1 < 8UC is plotted in Fig.5(a), while that with the configuration that P1 > 8 UC is plotted in Fig.5(b). Fig.5 also shows that κeff of RML is consistently lower than that of the corresponding 2SL structure, as a consequence of Anderson localization. Only when phonon coherence is weak, the introduction of randomness cannot significantly affect κ of nanostructures [13,30,32,38,49,71].
Fig.5 GBDT prediction of κeff of 2SL and RML structures for (a) P1 < 8 UC, and (b) P1 > 8 UC. The structure id is arranged in order of increasing corresponding P0 for better visualization of the data.

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To compare κeff with SL structure, the configurations for the optimal 2SL structure with maximum enhancement ratio Δ corresponding to each P0 in Fig.5 are listed in Tab.1. It is noticeable that the optimal 2SL with a larger Δ in this situation all possess the characteristic that the difference between P1 and P2 is large. The importance analysis of GBDT also illustrates that these two factors (P1 and P2) are essential to determine κeff (see Fig. S13 in SI). Meanwhile, we find that the deviation between P0 and Pt (8 UC) diminishes the ability to improve κeff. With the increase of P0, the maximum enhancement ratio Δ in Tab.1 first increases and then decreases, which is due to the fact that the coherent phonon transport becomes weaker when the deviation between P0 and Pt is larger. When P0 = 1024 UC and P1 < 8 UC, the maximum Δ is negative because coherent phonon transport is negligible and the interface between the two regions in 2SL cannot be ignored. Except for this very large P0 case, by comparing the impact on different region combinations in 2SL (P1 < 8 UC and P1 > 8 UC) on maximum Δ, we find that 2SL structures with the configuration P1 < 8 UC consistently have a larger Δ than those for the configuration P1 > 8 UC to gain ideal improvement of κeff (see Tab.1). This can also be explained by the fact that more coherent phonons are formed in 2SL structure with the configuration P1 < 8 UC. Therefore, we can conclude that enhanced thermal transport relative to SL structure can be achieved in 2SL structure when the period of SL structure P0 is near the critical transition period Pt. Since Pt typically has a very small value, our study provides an efficient way to promote the thermal transport in the multilayer structure by engineering the coherent phonon transport, despite the presence of very dense interfaces.
Tab.1 The machine learning predictions of κeff in SL structure and the optimal 2SL structure with different configurations (P1 < 8 UC and P1 > 8 UC) versus the period P0of SL structure. Here, Δ is the relative enhancement ratio defined as Δ=κeff2SLκeffSLκeffSL.
P0(UC) κeff, SL (W·m−1·K−1) P1 (UC) P2(UC) κeff, 2SL (W·m−1·K−1) Maximum Δ (%)
4 4.25 2 1026 11.11 161
8 3.86 2 1538 11.30 193
16 4.32 2 1794 11.71 171
16 4.32 12 524 6.84 58
32 4.99 2 1922 11.65 134
32 4.99 10 1418 10.20 104
64 5.33 2 1986 11.56 117
64 5.33 16 1552 10.26 93
128 6.87 2 2018 11.55 68
128 6.87 18 1778 10.24 49
256 8.77 2 2034 11.55 32
256 8.77 16 1936 10.81 23
512 11.64 2 2042 11.84 2
512 11.64 368 560 12.30 6
1024 15.01 2 2046 12.39 −17
1024 15.01 1022 1026 15.01 0

4 Conclusion

To summarize, we have identified the aperiodic 2SL and its corresponding RML structures that have a higher κeff than the SL counterpart by using both traditional MD simulations and a ML prediction model based on GBDT. For each SL period P0, the enhancement ratio Δ in κeff increases monotonically with the increase of portion of left region with a smaller period P1 in 2SL structure, due to the significant coherent phonon transport in the left region. Besides, the enhancement ratio Δ can be further maximized with the decrease of P1. When introducing randomness to the interface positions, κeff of RML structure is reduced compared to that of 2SL structure, as a consequence of phonon localization. Surprisingly, there still exists RML structure with higher κeff than that of the SL counterpart even in the presence of phonon localization, highlighting the importance of coherent phonon transport in enhancing the thermal transport. Furthermore, by exploring the whole design space via the machine learning technique, it is found that the enhancement effect of κeff by 2SL structure is more significant when the period of SL structure P0 is close to the critical transition period Pt between the coherent and incoherent phonon transport regimes. In addition, the 2SL structure with the configuration that P1 < Pt is the best choice to gain maximum Δ, which can reach up to 193%. Our study provides a novel approach to enhance the thermal transport in multilayer structures by regulating the wave-particle duality of phonons via the structure optimization.

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Declaration of interests

The authors declare no competing financial interest.

Electronic supplementary material

is available in the online version of this article at https://doi.org/10.1007/s11467-022-1170-5 and https://journal.hep.com.cn/fop/EN/10.1007/s11467-022-1170-5 and are accessible for authorized users.

Acknowledgements

This project was supported in part by the grants from the National Natural Science Foundation of China (Grant Nos. 12075168 and 11890703), the Science and Technology Commission of Shanghai Municipality (Grant Nos. 19ZR1478600 and 21JC1405600), and the Fundamental Research Funds for the Central Universities (Grant No. 22120220060).

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