1 Introduction
Ammonia (NH
3) is an indispensable feedstock for agriculture and the chemical industry, and it is also considered as a renewable energy carrier with high hydrogen content. Nowadays, large-scale NH
3 production relies on the Haber–Bosch process under harsh reaction conditions (350–500 ℃, 150–300 atm), which is energy-intensive and emission-intensive when H
2 is produced by steam reforming. Electrochemical nitrogen reduction reaction (NRR) is considered a promising alternative of NH
3 synthesis under ambient conditions, which is carbon-free and energy-saving [
1-
3].
Exploring high selectivity and activity electrocatalysts is crucial for NRR. Tremendous efforts have focused on transition metal (TM) based catalysts, such as Fe, Mo, and Cu, whose
d-orbital electrons are employed to react with N
2, experiencing electron donation and back donation at the early and late stages of the reactions respectively [
4,
5]. While a typical issue is that TM-based electrocataltysts tend to exhibit worse-balance between N
2 cleavage (early stage) and NH
3 dissociation (late stage) [
6,
7]. In addition,
d-orbital electrons of TMs are more likely to form TM–H bond and promote hydrogen evolution reaction (HER) competitor, reducing Faradaic efficiency significantly [
8-
11]. Recently, main-group catalysts have demonstrated good catalytic performance for NRR, such as cyano group/g-C
3N
4 and BaCeO
3-xN
yH
z [
12,
13]. The stronger interactions between main-group elements and N
2 absorbers boost the interfacial kinetics together with HER suppression [
14,
15]. Particularly, semiconducting compounds containing alkali metals, characterized by higher quantum efficiency and lower cost, overcome the instability of alkali and alkaline metals in NH
3 synthesis [
16,
17]. Earth-abundant potassium (K) is a widely employed promoter for the Haber–Bosch process in ammonia industry with high reduction capacity and excellent ion conductivity. Metallic K is a sufficiently strong chemical reductant that cannot be applied aqueous reactions due to strong reactivity with water [
18-
22]. However, it is useful to explore the possibility of using K as a promotor in NRR catalysts.
The two-dimensional materials (2D) materials become popular candidates for reaction substrates, because of huge surface, special structure and unique physicochemical properties, such as borophene, TCNQ, and MoPc [
23-
25]. Interfacial engineering is a powerful technique to expedite electronic transportation and reaction kinetics via interfacial coupling between two active components. Due to the larger counterparts contact area and low aggregation, 2D/2D heterojunction, especially carbon based catalysts, enhances physicochemical properties and provide more electron transition channels remarkably, and have been employed widely for electrochemical studies [
26-
32]. It is noteworthy that cost-effective graphene is one the most popular carbon-based supports, and it has a tolerance of acidic or alkaline reaction conditions and a larger surface and ultrafast electronic mobility. In this work, we propose to use graphene hybrid with K-rich 2D materials (K
12Sb
2Se
3 and K
3Sb) to build heterojunction, based on which full NRR studies have been investigated. Our aim is to explore K-based catalysts for NRR, expecting to break the key limits raised by transition metals. These compounds are selected based on three considerations: (i) both have been synthesized experimentally; (ii) they offer excellent conductivity as need for electrochemical NRR; and (iii) excellent stability, conductivity and reactivity have been demonstrated in batteries and photocatalysis applications [
33-
38]. For comparison, elementary steps of NRR process on K
12Sb
2Se
3, K
3Sb and K
3Sb/graphene are evaluated via density functional theory (DFT) calculations. As demonstrated below, both K-site and graphene substrate play key roles in N
2 fixation and reduction, improving the overall NRR feasibility.
2 Computional methods
All optimized geometry and free energy of intermediates were calculated based on the First Functional Theory through the Vienna Ab initio Simulation Package (VASP) [
39]. Revised Perdew–Burke–Ernzerhof (RPBE) functional of the generalized gradient approximation (GGA) was used to describe the electron exchange-correlation interactions [
40]. The electron-core interactions were examined by the projected augmented wave. The convergences were 0.001 eV
Å
-1 in force and 10
-4 eV in energy with 450 eV kinetic energy cutoff. Models were
supercell with 15 Å vacuum space. The K
3Sb/graphene heterostructure was created by using
and
supercell of graphene and K
3Sb (50 carbons, 4 antimony and 12 potassium atoms), and the mismatch along the interface of K
3Sb/graphene is about 2.51%. The Monkhorst–Pack
k-point sampling of
[
41], and Van der Waals (VdW) interaction was corrected via DFT-D3 method. The Gibbs free energy changes (
) were calculated as followed:
, where
was binding energy difference and
was zero-point energy difference for hydrogenation steps, as described in our early studies [
13,
42].
was term from the Computational Chemistry Comparison and Benchmark database (http://cccbdb.nis.gov/). The Crystal Orbital Hamilton Population (COHP) was calculated via the LOBSTER program in VASP [
43]. The VASPsol was employed to investigate reaction intermediates under solvation effect [
44]. In addition, transition states were calculated by climbing-image nudged elastic band (CI-NEB) method. Moreover, the thermodynamic stability of K
3Sb/graphene was examined by ab initio molecular dynamic (AIMD) simulation at 300 K (time period: 2 ps, time step: 2 fs).
3 Results and discussion
Figure 1 shows optimized geometries of K12Sb2Se3, K3Sb and K3Sb/graphene, where K12Sb2Seand K3Sb/ graphene are labelled as K/SbSe and K3Sb/G, respectively. The optimized interlayer distance between K3Sb and graphene is 3.34 Å.
Generally, electrochemical NRR has been divided into dissociative and associative reaction mechanisms, depending on N
2 adsorption states [
45]. For the former, N
N triple bond is broken to generate N atoms before hydrogenation, while the cleavage of N
N is end-on configuration under associative mechanism. Specifically, full associative NRR can be achieved through alternating and distal pathways, and dissociative NRR is preformed via enzymatic pathway. On the alternating and enzymatic pathways, two N atoms are hydrogenated with H* alternatively, and then release two NH
3. Otherwise, H atoms attack the distal N atom continuously in the distal pathway. After the release of the first NH
3, protons begin to bind with the other N atom until the second NH
3 formation. Following these paths, potential intermediate states have been fully optimized and presented in Fig. S1.
On the alternating pathway [see Fig. 2(a)], N2 adsorptions on K/SbSe, K3Sb and K3Sb/G are endothermic process with of 0.41 eV, 0.35 eV and 0.32 eV, respectively. Subsequently, the first hydrogenation of N2* is an uphill step with being 2.21 eV and 1.84 eV on K/SbSe and K3Sb, respectively, which is also the potential-determining step (PDS). For K/SbSe, after the second H* is coupled with NNH* ( eV), the reduction of NHNH* to NHNH2* needs extra energy of 0.17 eV. The of subsequent hydrogenation reactions are negative, which are eV, eV and eV, suggesting the spontaneous nature. In the K3Sb case, the second H-adding to the other N atom is spontaneous with eV. After that, the NHNH* is reduced to NHNH2* with small energy demand of 0.05 eV, and then the next hydrogenation step becomes spontaneous again ( eV), releasing the first NH3 ( eV). Finally, the sixth H* attacks the reaming N with large energy reduce by eV. Overall, the initial N2 reduction is the most challenging step, due to poor activation as described in Fig. 3. Compared with K/SbSe and K3Sb, graphene substrate can remarkably change the first protonation step, reducing from 1.84 eV to 0.61 eV, which is still PDS, but performs better than most transitional metals (typically 1.0 eV). The following hydrogenation reactions are downhill in Gibbs free energy diagram of K3Sb/G with are eV, eV, eV and eV, correspondingly, until the last protonation step ( eV, for NHrelease).
On the distal pathway [see Fig. 2(b)], N2 adsorption and the first hydrogenation have the same as that of alternating pathway for K/SbSe, K3Sb and K3Sb/G. The first H* addition is still the PDS in all cases. The second H* addition on the distal N atom is an uphill step with values of 0.41 eV, 0.62 eV and 0.61 eV for K/SbSe, K3Sb and K3Sb/G, respectively, suggesting that N2 activation faces higher thermodynamic barrier than that on alternating pathway. However, the following hydrogenation reactions on K/SbSe are downhill in energy by eV, eV, eV and eV. For K3Sb, the corresponding are eV, 0.66 eV, eV and eV. After the first NH3 releases spontaneously ( eV) on K3Sb/G, the next protonation step is difficult, labelled by eV, while the following hydrogenation is spontaneous, until the release of the second NH3 with energy input ( eV). Overall, K3Sb/G is the best among the three, favouring the alternating pathway whose first hydrogenation as the PDS with maximum free energy change ( eV).
In contrast, the N2 cleavage needs large energy inputs on the enzymatic pathway [Fig. 2(c)]. The of N2 dissociation are 0.50, 0.38 and 1.66 eV on K/SbSe, K3Sb and K3Sb/G, respectively, inducting that dissociative mechanism is rarely favourable in electrochemical NH3 synthesis. Besides, the K/SbSe and K3Sb/G can inhibit HER significantly with more positive (H*) values than (N2*), as shown in Fig. 5(c).
To further understand K–N2* interaction, charge difference has also been collected and shown in Fig. 3. In the case of K/SbSe, N2 is adsorbed at single K site with K–N2 distance of 3.12 Å together with of 0.41 eV. It is also worth to note that there is nearly no N–N bond elongation (1.119 Å vs 1.115 Å in free N2 molecular), featured with only 0.01 electrons injected into N–N bond [see Figs. 3(a) and (d)]. Based on all these analysis, it is clear that K/SbSe can hardly activate N2. Given metallic K is highly active, the above poor performance offered by K/SbSe indicates that fully oxidized K cannot be used as an NRR promoter.
Now we turn to K3Sb, over which N2 favours the adsorption over two neighbouring K sites, as shown in Fig. 3(b), with eV. Interestingly, N–N distance has been slightly enlarged to 1.13 Å, accompanied with an electron transfer of 0.18 e from K3Sb to N2, as shown in Fig. 3(e). In other words, K3Sb may offer NRR catalysis because N2 has been partially activated under such adsorption. When K3Sb is loaded on graphene, for N2 fixation can be further reduced to 0.32 eV; more impressively, N–N bond length is increased to 1.210 Å and electron transfer up to 0.40 e [see Figs. 3(c) and (f)]. It is obvious that K3Sb/G is more active with respect to original K3Sb.
Based on early studies, the binding strength between active sites and N
2 directly affects the following elementary steps and the overall kinetics of full NRR process, where too strong N
2 adsorption hinders NH
3 release and vice-verse [
46-
48]. For these K-based catalysts, N
2 activation and initial hydrogenation are the most difficult steps as identified by energy profile, indicating that K–N
2 interaction needs to be strengthened. This is not surprising because K in these compounds has been oxidized; as a result, its capacity to adsorb and react with N
2 is low, essentially different from K metals.
To gain deep insights into N
2 activation over K-based compounds, the PDOS and –COHP of optimized end-on N
2* intermediations have been calculated, as shown in Fig. 4. For free N
2, the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) are dominated by 3
and 2
π*, respectively. Herein, the large HOMO–LUMO gap in Fig. 4(a) is consistent with previous calculations, and such gap limits the direct activation through electronic excitation [
2,
39,
49]. In the case of K/SbSe, HOMO–LUMO gap for N
2 has almost unchanged, and there is nearly no antibonding state under Fermi level as shown in Fig. 4(b), suggesting that N
2–K interaction is very weak and N
2 still keeps its inert nature. In K
3Sb case, however, N
2 is adsorbed over two K-sites (labelled as K6 and K11), under which occupied orbitals of these K-sites can transfer electrons into N
2 2
π* [0.18 e, see Fig. 3(e)]. As a result, a few antibonding states appear at the Fermi level (because N
2 bonding states have been fully occupied) in Fig. 4(c), indicating that N
2 has been partially activated. Such activation becomes more significant in the K
3Sb/G case, in which N
2 is similarly fixed by two K-sites (labelled as K56 and K61). As shown in Fig. 4(d), comprehensive orbital hybridizations between K and N
2 are achieved, together with more charge transfer [0.40 e, see Fig. 3(f)]. This enforces more antibonding states below Fermi level and heavier N
2 activation; as a result, higher reactivity and better performance demonstrated in Fig. 3 can be well understood.
The evolution of –COHP for PDS formation (N2* + H* NNH*) on K3Sb/G was shown in Fig. S2, along with structures of initial state, transition state and final state. In the initial state [see Fig. S2(a)], both bonding and anti-bonding states of N–H are below Fermi level, which are filled with electrons. Such repulsive interaction is the source of hydrogenation barrier, and N–H bond length is 2.30 Å. The anti-bonding moves beyond Fermi level with broaden peak in Fig. S2(b), indicating that anti-bonding of transition state donates electrons with N–H bond length of 1.61 Å. As shown in Fig. S2(c), the anti-bonding of the final state becomes empty, while the energy of bonding states decreases to eV with sharp peak and N–H bond length reduces to 1.08 Å, resulting lower system energy.
Given graphene is well known for its large π-bonding, K3Sb/G junction enables 1.00 e electron transfer from K to graphene [see Figs. 5(a) and (b)]. As electrons donator, K preforms stronger metallicity and interlayer distance increases to 3.73 Å, revealing that the mediation by graphene substrate plays the key role to promote the catalysis performance of K3Sb.
Considering aqueous electrolytes in NRR experiments, solvation effect is included on K3Sb/graphene, and Fig. S3(b) presents the catalytic performance on alternating pathway with and without solvation effect. Under solvation effect, N2* + H* NNH* is still the PDS, and eV is nearly unchanged as compared with that without solvation effect ( eV). Clearly, solvation effect cannot affect K3Sb/G catalytic activity significantly.
Furthermore, the strain effect is able to alter electronic structure of electrocatalysts, and then influence the reaction intermediates [
49,
50]. As shown in Fig. S4(a), the free energy of K
3Sb/G shows linear variation with lattice constants under biaxial stress from
% to 5%. Similarly, the C–C bond length of graphene elongated with the increase of tensile stress [see Fig. S4(b)]. However, the interlayer distance between K
3Sb and graphene is minimum under no strain effect. Additionally, the catalytic activity is sensitive to strain in horizontal direction. Our results in Fig. S3(a) prove that compressive/tensile stress has negative influence on catalytic activity, suggesting interface between K
3Sb and graphene is sensitive to strain effect. Moreover, as shown in Fig. S5, the AIMD result proposed that the small energy and temperature oscillate and stable structure of K
3Sb/G without significant deformations at 300 K, indicating that the K
3Sb/G has high thermodynamic stability.
It is worth pointing out that N
2 activation by K-species has been experimentally studied recently [
13,
51-
53], in which K has been introduced as ions from the solution but loaded to porous materials as active site to fix N
2. Its mechanism is similar with this work, but the loading ratio is remarkably different, because herein K, as a major component of the catalyst, is abundant. Given N
2 activation is the first step for full NRR, such inherent active sites do not undermine catalyst stability, making it different from the reactivity brought by vacancies [
54-
56] or single-atom catalysts [
57-
61]. Therefore, the activity of K-site can be improved after being loaded on graphene, indicating that the substrate can regulate electronic states of the catalyst and the performance. Such promotion effect associated with catalyst-substrate interactions has been widely reported [
62-
65], leaving a large space for further optimization of K-based catalysts.
4 Conclusion
Through DFT calculations, we explored the catalysis performance of K-based main group compounds (K12Sb2Se3 and K3Sb) for NRR. With respect to K12Sb2Se3, K3Sb is more active and its activity can be further improved through the formation of K3Sb/graphene heterojunction, which offers excellent catalytic performance for NRR process as featured by small thermodynamic barrier ( eV). These findings provide a new insight that alkali-contained semiconducting compounds hybrid with graphene support may be a new option for the design of NRR catalysts.