In situ characterization of optoelectronic nanostructures and nanodevices

Abstract

One-dimensional (1-D) semiconductor nanostructures can effectively transport electrons and photons, and are considered to be promising building blocks for future optoelectronic nanodevices. In this review, we present our recent efforts to integrate optical techniques and in situ electron microscopy for comprehensively characterizing individual 1-D optoelectronic nanostructures and nanodevices. The technical strategies and their applications in “green” emission and optical confinement in 1-D ZnO nanostructures will be introduced. We also show in situ assembly and characterization of nanostructures for optoelectronic device purposes. Using these examples, we demonstrate that the combination of optical techniques and in situ electron microscopy can be powerful for the studies of optoelectronic nanomaterials and nanodevices.

Keywords

one-dimensional (1-D) semiconductor nanostructure / optoelectronic nanodevices / in situ electron microscopy / optical confinement / deep level emission

References

[1] X. Duan, Y. Huang, Y. Cui, J. Wang, and C. M. Lieber, Nature, 2001, 409: 66

[2] R. Agarwal and C. M. Lieber, Appl. Phys. A, 2006, 85: 209

[3] Y. Li, F. Qian, J. Xiang, and C. M. Lieber, Materials Today, 2006, 9: 18

[4] R. X. Yan, D. Gargas, and P. D. Yang, Nature Photonics, 2009, 3: 569

[5] M. A. Zimmler, D. Stichtenoth, C. Ronning, W. Yi, V. Narayanamurti, T. Voss, and F. Capasso, Nano Lett., 2008, 8: 1695

[6] M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. D. Yang, Science, 2001, 292: 1897

[7] H. Kind, H. Yan, B. Messer, M. Law, and P. D. Yang, Adv. Mater., 2002, 14: 158

[8] M. Law, D. J. Sirbuly, J. C. Johnson, J. Goldberger, R. J. Saykally, and P. D. Yang, Science, 2004, 305: 1269

[9] X. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, Nature, 2003, 421: 241

[10] H. Zhou, M. Wissinger, J. Fallert, R. Hauschild, F. Stelzl, C. Klingshirn, and H. Kalt, Appl. Phys. Lett., 2007, 91: 181112

[11] R. F. Oulton, V. J. Sorger, T. Zentgralf, R. M. Ma, C. Gladden, L. Dai, G. Bartal, and X. Zhang, Nature, 2009, 461: 629

[12] C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, Nano Lett., 2007, 7: 1003

[13] B. Tian, X. Zheng, T. J. Kempa, Y. Fang, N. Yu, G. Yu, J. Huang, and C. M. Lieber, Nature, 2007, 449: 885

[14] M. R. Lee, R. D. Eckert, K. Forberich, G. Dennler, C. J. Brabec, and R. A. Gaudiana, Science, 2009, 324: 232

[15] L. Tong, R. R. Gattass, J. B. Ashcom, S. He, J. Lou, M. Shen, I. Maxwell, and E. Mazur, Nature, 2003, 426: 816

[16] A. L. Pan, W. C. Zhou, E. S. P. Leong, R. B. Liu, A. H. Chin, B. S. Zou, and C. Z. Ning, Nano Lett., 2009, 9: 784

[17] J. Dai, C. X. Xu, K. Zheng, C. G. Lv, and Y. P. Cui, Appl. Phys. Lett., 2009, 95: 241110

[18] M. Gao, W. L. Li, Y. Liu, Q. Li, Q. Chen, and L. M. Peng, Appl. Phys. Lett., 2008, 92: 113112

[19] C. Y. Li, M. Gao, C. Ding, X. X. Zhang, L. H. Zhang, Q. Chen, and L. M. Peng, Nanotechnology, 2009, 20: 175703

[20] S. Frank, P. Poncharal, Z. L. Wang, and W. A. de Heer, Science, 1998, 280:1744

[21] M. S. Wang, J. Y. Wang, Q. Chen, and L. M. Peng, Adv. Funct. Mater., 2005, 15:1825

[22] L. M. Peng, Q. Chen, X. L. Liang, S. Gao, J. Y. Wang, S. Kleindiek, and S. W. Tai, MICRON, 2004, 35: 495

[23] Y. Liu, S. Wang, Z. Y. Zhang, L. M. Peng, L. Shi, and Q. Li, Appl. Phys. Lett., 2008, 92: 033102

[24] Q. Chen, S. Wang, and L. M. Peng, Nanotechnology, 2006, 17: 1087

[25] X. L. Wei, Y. Liu, Q. Chen, and L. M. Peng, Nanotechnology, 2008, 19: 355304

[26] H. Kalt, Lect. Notes Phys., 2005, 658: 51

[27] J. C. Kim, H. Rho, L. M. Smith, H. E. Jackson, S. Lee, M. Dobrowolska, and J. K. Furdyna, Appl. Phys. Lett., 1999, 75: 214

[28] A. Gustafsson, M. E. Pistol, L. Montelius, and L. J. Samuelson, Appl. Phys., 1998, 84: 1715

[29] D. Liu, A. L. Pan, G. Z. Xu, Y. Q. Bai, X. Zhu, and B. S. Zou, Opt. Rev., 2006, 13: 235

[30] S. A. Empedocles, R. Neuhauser, K. Shimizu, and M. G. Bawendi, Adv. Mater., 1999, 11: 1243

[31] J. B. Baxter, F. Wu, and E. S. Aydil, Appl. Phys. Lett., 2003, 83: 3797

[32] X. B. Han, L. Z. Kou, X. L. Lang, J. B. Xia, N. Wang, R. Qin, J. Lu, J. Xu, Z. M. Liao, X. Z. Zhang, X. D. Shan, X. F. Song, J. Y. Gao, W. L. Guo, and D. P. Yu, Adv. Mater., 2009, 21: 4937

[33] P. M. Petroff and D. W. Lang, Appl. Phys. Lett., 1977, 31: 60

[34] B. G. Yacobi and D. B. Holt, Cathodoluminescence Microscopy of Inorganic Solids, New York: Springer-Verlag, 1990: 116

[35] Y. Ohno and S. Takeda, Rev. Sci. Instrum., 1995, 66: 4866

[36] L. J. Brillson, J. Vac. Sci. Technol. B, 2001, 19: 1762

[37] M. Gao, S. T. Bradley, Y. Cao, D. Jena D, Y. Lin Y, S. A. Ringel, J. Hwang, W. J. Schaff, and L. J. Brillson, J. Appl. Phys., 2006, 100: 103512

[38] A. B. Djurišić and Y. H. Leung, Small, 2006, 2: 944

[39] K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys., 1996, 79: 7983

[40] A. B. DjurišićY. H. Leung, K. H. Tam, Y. F. Hsu, L. Ding, W. K. Ge, Y. C. Zhong, K. S. Wong, W. K. Chan, H. L. Tam, K. W. Cheah, W. M. Kwok, and D. L. Phillips, Nanotechnology, 2007, 18: 095702

[41] C. W. Chen, K. H. Chen, C. H. Shen, A. Ganguly, L. C. Chen, J. J. Wu, H. I. Wen, and W. F. Pong, Appl. Phys. Lett., 2006, 88: 241905

[42] P. C. Chang, C. J. Cheien, D. Stichtenoth, C. Ronning, and J. G. Lu, Appl. Phys. Lett., 2007, 90: 113101

[43] D. C. Look, G. C. Farlow, S. Limpijumnong, S. B. Zhang, and K. Nordlund, Phys. Rev. Lett., 2005, 95: 225502

[44] A. Janotti and C. G. Van de Walle, Appl. Phys. Lett., 2005, 87: 122102

[45] M. Freitag, J. Chen, J. Tersoff, J. C. Tsang, Q. Fu, J. Liu, and P. Avouris, Phys. Rev. Lett., 2004, 93: 076803

[46] J. F. Wang, M. S. Gudiksen, X. F. Duan, Y. Cui, and C. M. Lieber, Science, 2001, 293: 1455

[47] L. Wischmeier, T. Voss, S. Börner, and W. Schade, Appl. Phys. A, 2006, 84: 111

[48] F. Qian, S. Gradecak, Y. Li, C. Y. Wen, and C. M. Liber, Nano Lett., 2005, 5: 2287

[49] C. J. Barrelet, A. B. Greytak, and C. M. Lieber, Nano Lett., 2004, 4: 1981

[50] L. K. van Vugt, S. Rühle, P. Ravindran, H. C. Gerritsen, L. Kuipers, and D. Vanmaekelbergh, Phys. Rev. Lett., 2006, 97: 147401

[51] S. Rühle, L. K. van Vugt, H. Y. Li, N. A. Keizer, L. Kuipers, and D. Vanmaekelbergh, Nano Lett., 2008, 8: 119

[52] J. C. Johnson, H. Yan, P. Yang, and R. J. Saykally, J. Phys. Chem. B, 2003, 107: 8816

[53] T. Voss, G. T. Svacha, E. Mazur, S. Müller, C. Ronning, D. Konjhodzic, and F. Marlow, Nano Lett., 2007, 7: 3675

[54] R. M. Ma, X. L. Wei, L. Dai, S. F. Liu, T. Chen, S. Yue, Z. Li, Q. Chen, and G. G. Qin, Nano Lett., 2009, 9: 2697

[55] W. L. Li, M. Gao, X. X. Zhang, D. F. Liu, L. M. Peng, and S. S. Xie, Appl. Phys. Lett., 2009, 95: 173109

[56] W. L. Li, M. Gao, R. Cheng, X. X. Zhang, S. S. Xie, and L. M. Peng, Appl. Phys. Lett., 2008, 93: 023117

[57] X. X. Zhang, D. F. Liu, L. H. Zhang, W. L. Li, M. Gao, W. J. Ma, Y. Ren, Q. S. Zeng, Z. Q. Niu, W. Y. Zhou, and S. S. Xie, J. Mater. Chem., 2009, 19: 962

[58] J. C. Johnson, H. Q. Yan, P. D. Yang, and R. J. Saykally, J. Phys. Chem. B, 2003, 107: 8816

[59] J. Bao, M. A. Zimmler, and F. Capasso, Nano Lett., 2006, 6: 1719

[60] Y. Yu, C. H. Jin, R. H. Wang, Q. Chen, and L. M. Peng, J. Phys. Chem. B, 2005, 109: 18772

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