Eddy current measurement of the thickness of top Cu film of the multilayer interconnects in the integrated circuit (IC) manufacturing process

Abstract

This paper proposes a new eddy current method, named equivalent unit method (EUM), for the thickness measurement of the top copper film of multilayer interconnects in the chemical mechanical polishing (CMP) process, which is an important step in the integrated circuit (IC) manufacturing. The influence of the underneath circuit layers on the eddy current is modeled and treated as an equivalent film thickness. By subtracting this equivalent film component, the accuracy of the thickness measurement of the top copper layer with an eddy current sensor is improved and the absolute error is 3 nm for sampler measurement.

Graphical abstract

Keywords

CMP / eddy current / multilayer wafer / Cu interconnects / equivalent unit

References

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RIGHTS & PERMISSIONS

Higher Education Press and Springer-Verlag Berlin Heidelberg