Eddy current measurement of the thickness of top Cu film of the multilayer interconnects in the integrated circuit (IC) manufacturing process

Zilian QU, Yonggang MENG, Qian ZHAO

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PDF(1184 KB)
Front. Mech. Eng. ›› 2015, Vol. 10 ›› Issue (1) : 1-6. DOI: 10.1007/s11465-015-0325-2
RESEARCH ARTICLE
RESEARCH ARTICLE

Eddy current measurement of the thickness of top Cu film of the multilayer interconnects in the integrated circuit (IC) manufacturing process

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Abstract

This paper proposes a new eddy current method, named equivalent unit method (EUM), for the thickness measurement of the top copper film of multilayer interconnects in the chemical mechanical polishing (CMP) process, which is an important step in the integrated circuit (IC) manufacturing. The influence of the underneath circuit layers on the eddy current is modeled and treated as an equivalent film thickness. By subtracting this equivalent film component, the accuracy of the thickness measurement of the top copper layer with an eddy current sensor is improved and the absolute error is 3 nm for sampler measurement.

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Keywords

CMP / eddy current / multilayer wafer / Cu interconnects / equivalent unit

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Zilian QU, Yonggang MENG, Qian ZHAO. Eddy current measurement of the thickness of top Cu film of the multilayer interconnects in the integrated circuit (IC) manufacturing process. Front. Mech. Eng., 2015, 10(1): 1‒6 https://doi.org/10.1007/s11465-015-0325-2

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