Molecular dynamics modeling of a single diamond abrasive grain in grinding

Angelos P. MARKOPOULOS, Ioannis K. SAVVOPOULOS, Nikolaos E. KARKALOS, Dimitrios E. MANOLAKOS

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PDF(2593 KB)
Front. Mech. Eng. ›› 2015, Vol. 10 ›› Issue (2) : 168-175. DOI: 10.1007/s11465-015-0337-y
RESEARCH ARTICLE
RESEARCH ARTICLE

Molecular dynamics modeling of a single diamond abrasive grain in grinding

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Abstract

In this paper the nano-metric simulation of grinding of copper with diamond abrasive grains, using the molecular dynamics (MD) method, is considered. An MD model of nano-scale grinding, where a single diamond abrasive grain performs cutting of a copper workpiece, is presented. The Morse potential function is used to simulate the interactions between the atoms involved in the procedure. In the proposed model, the abrasive grain follows a curved path with decreasing depth of cut within the workpiece to simulate the actual material removal process. Three different initial depths of cut, namely 4 Å, 8 Å and 12 Å, are tested, and the influence of the depth of cut on chip formation, cutting forces and workpiece temperatures are thoroughly investigated. The simulation results indicate that with the increase of the initial depth of cut, average cutting forces also increase and therefore the temperatures on the machined surface and within the workpiece increase as well. Furthermore, the effects of the different values of the simulation variables on the chip formation mechanism are studied and discussed. With the appropriate modifications, the proposed model can be used for the simulation of various nano-machining processes and operations, in which continuum mechanics cannot be applied or experimental techniques are subjected to limitations.

Keywords

molecular dynamics / abrasive process / chip formation / cutting force / temperature

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Angelos P. MARKOPOULOS, Ioannis K. SAVVOPOULOS, Nikolaos E. KARKALOS, Dimitrios E. MANOLAKOS. Molecular dynamics modeling of a single diamond abrasive grain in grinding. Front. Mech. Eng., 2015, 10(2): 168‒175 https://doi.org/10.1007/s11465-015-0337-y

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