20 MHz switched-current sample-and-hold circuit with low charge injection

Cen Gao , Suying Yao , Jing Gao

Transactions of Tianjin University ›› 2013, Vol. 19 ›› Issue (1) : 47 -52.

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Transactions of Tianjin University ›› 2013, Vol. 19 ›› Issue (1) : 47 -52. DOI: 10.1007/s12209-013-1957-0
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20 MHz switched-current sample-and-hold circuit with low charge injection

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Abstract

A switched-current sample-and-hold circuit with low charge injection was proposed. To obtain low noise and charge injection, the zero-voltage switching was used to remove the signal-dependent charge injection, and the signal-independent charge injection was reduced by removing the feed-through voltage from the input port of the memory transistor directly. This current sample-and-hold circuit was implemented using CMOS 180 nm 1.8 V technology. For a 0.8 MHz sinusoidal signal input, the simulated signal-to-noise and distortion ratio and total harmonic distortion were improved from 53.74 dB and −51.24 dB to 56.53 dB and −54.36 dB at the sampling rate of 20 MHz respectively, with accuracy of 9.01 bit and power consumption of 0.44 mW.

Keywords

charge injection / current-mode circuit / sample-and-hold / switched-current

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Cen Gao, Suying Yao, Jing Gao. 20 MHz switched-current sample-and-hold circuit with low charge injection. Transactions of Tianjin University, 2013, 19(1): 47-52 DOI:10.1007/s12209-013-1957-0

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