Frontiers of Optoelectronics >
Photoresponse of ZnO single crystal films
Published date: 05 Aug 2008
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The ohmic contact and photoresponse of a ZnO single crystal film by metalorganic chemical vapor deposition (MOCVD) were investigated. The electrical and photoresponsive changes in the ZnO film due to RF sputter deposition of SiO2 (antireflection coating) were also discussed. The experimental results show that the non-alloyed Al/Au metallization scheme forms good ohmic contact on n-type ZnO, RF sputter deposition of SiO2 induces defects which behave as carrier traps and prolong response time, and the photoresponse of ZnO epitaxial film deteriorates with time.
Ying Li , Shiwei Feng , Ji Yang , Yuezong Zhang , Xuesong Xie , Changzhi LÜ , Yicheng Lu . Photoresponse of ZnO single crystal films[J]. Frontiers of Optoelectronics, 2008 , 001(3-4) : 309 -312 . DOI: 10.1007/s12200-008-0048-7
1 |
LiuLiudi, NiGuoqiang, ZhongShengdong,
|
2 |
RazeghiM, RogalskiA. Semiconductor ultraviolet detectors.Journal of Applied Physics,1996, 79(10): 7433–7473
|
3 |
GaoGuolong. Solid state UV photodetectors are searching for proper market share. Infrared, 2003, (9): 45–46 (in Chinese)
|
4 |
PeartonS J, NortonaD P, IpK,
|
5 |
LiuY, GorlaC R, LiangS,
|
6 |
ZhouPeng, WangLi, FangWenqing,
|
7 |
GorlaC R, EmanetogluN W, LiangS,
|
8 |
ZhuShunming, YeJiandong, GuShulin,
|
9 |
XuWeizhong, YeZhizhen, ZhouTing,
|
10 |
ZhangD H, BrodieD E. Photoresponse of polycrystalline ZnO films deposited by r.f. bias sputtering.Thin Solid Films1995, 261(1-2): 334–339
|
11 |
StudenikinS A, GolegoN, CociveraM. Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films. Journal of Applied Physics, 2000, 87(5): 2413–2421
|
12 |
Jiménez-GonzálezA E, Soto UruetaJ A, Suárez-ParraR. Optical and electrical characteristics of aluminum-doped ZnO thin films prepared by solgel technique. Journal of Crystal Growth, 1998, 192(3-4): 430–438
|
13 |
KimH-K, KimK-K, ParkS-J,
|
14 |
SamsonovG V. The Oxide Handbook. 2nd ed. New York: IFI/Plenum, 1981
|
15 |
MitaniK, KawanoT. Damage in a GaAs surface caused by RF-sputter deposition of SiO2. Japanese Journal of Applied Physics, 1995, 34(9A): 4649–4652
|
16 |
AverinS V, SachotR. High-speed MSM-photodetectors. In: Proceedings of the 13th International Crimean Conference Microwave & Telecommunication Technology, 2003, 189–190
|
17 |
PearsallN M, CouttsT J, HillR,
|
18 |
JiangYuesong. Photoelectronics Technology and Experiment. Beijing: Beijing Institute of Technology Press, 2000 (in Chinese)
|
/
〈 |
|
〉 |