Photoresponse of ZnO single crystal films

Abstract

The ohmic contact and photoresponse of a ZnO single crystal film by metalorganic chemical vapor deposition (MOCVD) were investigated. The electrical and photoresponsive changes in the ZnO film due to RF sputter deposition of SiO₂ (antireflection coating) were also discussed. The experimental results show that the non-alloyed Al/Au metallization scheme forms good ohmic contact on n-type ZnO, RF sputter deposition of SiO₂ induces defects which behave as carrier traps and prolong response time, and the photoresponse of ZnO epitaxial film deteriorates with time.

Keywords

ZnO single crystal film / metalorganic chemical vapor deposition (MOCVD) / photoresponse / antireflection coating (AR coating) / RF sputter damage

References

[1] LiuLiudi, NiGuoqiang, ZhongShengdong, . Application and detection of ultraviolet and their new development. Optical Technology, 1998, (2): 87–90 (in Chinese)

[2] RazeghiM, RogalskiA. Semiconductor ultraviolet detectors.Journal of Applied Physics,1996, 79(10): 7433–7473

[3] GaoGuolong. Solid state UV photodetectors are searching for proper market share. Infrared, 2003, (9): 45–46 (in Chinese)

[4] PeartonS J, NortonaD P, IpK, . Recent progress in processing and properties of ZnO. Superlattices and Microstructures, 2003, 34(1-2): 3–32

[5] LiuY, GorlaC R, LiangS, . Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD. Journal of Electronic Materials, 2000, 29(1): 69–74

[6] ZhouPeng, WangLi, FangWenqing, . Electrical properties of ZnO thin film deposited by MOCVD at atmospheric pressure. Chinese Journal of Semiconductors, 2005, 26(3): 502–507 (in Chinese)

[7] GorlaC R, EmanetogluN W, LiangS, . Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (011¯2) sapphire by metalorganic chemical vapor deposition. Journal of Applied Physics, 1999, 85(5): 2595–2602

[8] ZhuShunming, YeJiandong, GuShulin, . MOCVD growth and properties of Ga-doped ZnO films. Chinese Journal of Semiconductors, 2005, 26(8): 1567–1571 (in Chinese)

[9] XuWeizhong, YeZhizhen, ZhouTing, . MOCVD growth of p-type ZnO thin films by using NO as dopant source. Chinese Journal of Semiconductors, 2005, 26(1): 38–41 (in Chinese)

[10] ZhangD H, BrodieD E. Photoresponse of polycrystalline ZnO films deposited by r.f. bias sputtering.Thin Solid Films1995, 261(1-2): 334–339

[11] StudenikinS A, GolegoN, CociveraM. Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films. Journal of Applied Physics, 2000, 87(5): 2413–2421

[12] Jiménez-GonzálezA E, Soto UruetaJ A, Suárez-ParraR. Optical and electrical characteristics of aluminum-doped ZnO thin films prepared by solgel technique. Journal of Crystal Growth, 1998, 192(3-4): 430–438

[13] KimH-K, KimK-K, ParkS-J, . Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer. Journal of Applied Physics, 2003, 94(6): 4225–4227

[14] SamsonovG V. The Oxide Handbook. 2nd ed. New York: IFI/Plenum, 1981

[15] MitaniK, KawanoT. Damage in a GaAs surface caused by RF-sputter deposition of SiO₂. Japanese Journal of Applied Physics, 1995, 34(9A): 4649–4652

[16] AverinS V, SachotR. High-speed MSM-photodetectors. In: Proceedings of the 13th International Crimean Conference Microwave & Telecommunication Technology, 2003, 189–190

[17] PearsallN M, CouttsT J, HillR, . Surface damage to InP substrates during RF sputtering. Thin Solid Films, 1981, 80(1-3): 177–181

[18] JiangYuesong. Photoelectronics Technology and Experiment. Beijing: Beijing Institute of Technology Press, 2000 (in Chinese)

Acknowledgements

The work was supported by the special fund of elitist cultivation of Beijing (67002013200302).

RIGHTS & PERMISSIONS

2014 Higher Education Press and Springer-Verlag Berlin Heidelberg