Introduction
Noise aware MTCMOS techniques
Tri-mode MTCMOS technique
Dual-switch MTCMOS technique
Tri-transistor-controlled MTCMOS technique
Simulation and results
Ground bounce noise
Effect of voltage scaling on ground bounce noise
Tab.1 Effect of voltage scaling on ground bounce noise (unit: mV) |
voltages | |||||||||
---|---|---|---|---|---|---|---|---|---|
0.7 V | 0.9 V | 1 V | |||||||
transistor size /nm | 2.67 | 10 | 15 | 2.67 | 10 | 15 | 2.67 | 10 | 15 |
conventional | 2.149 | 4.156 | 3.511 | ||||||
tri-mode | 0.122 | 0.125 | 0.127 | 1.299 | 1.3 | 1.286 | 2.616 | 2.593 | 2.51 |
dual switch | 0.117 | 0.115 | 0.115 | 0.883 | 0.876 | 0.890 | 1.628 | 1.62 | 1.603 |
TTH | 0.115 | 0.113 | 0.112 | 0.879 | 0.892 | 0.895 | 1.629 | 1.614 | 1.624 |
TTL | 0.112 | 0.111 | 0.110 | 0.874 | 0.905 | 0.901 | 1.625 | 1.617 | 1.614 |
Effect of transistor size on ground bounce noise
Fig.10 Waveform of virtual ground line voltage of TTH circuit during transitions from sleep-to-active mode through doze mode. The duration of doze mode is 87.41 ns. (a) Virtual ground line voltage with small doze (dozersmall = 2.67 nm); (b) virtual ground line voltage with larger doze (dozerlarge = 15 nm) |
Tab.2 Relaxation time for different circuits (unit: ns) |
transistor size | ||||
---|---|---|---|---|
2.67 nm | 10 nm | 15 nm | 20 nm | |
tri–mode | 88.56 | 20.51 | 52.45 | 64.57 |
dual–switch | 133.82 | 37.53 | 28.47 | 27.68 |
TTH | 87.41 | 22.98 | 25.32 | 39.45 |
TTL | 79.66 | 25.67 | 30.74 | 38.46 |
Fig.11 Waveform of real ground voltage of TTH circuit during transitions from the sleep-to-active mode through doze mode. The duration of doze mode is 87.41 ns. (a) Ground bounce noise on real ground with smaller doze (dozersmaller = 2.67 nm). (b) ground bounce noise on real ground with larger doze (dozerlarge = 15 nm) |
Tab.3 Effect of transistor size on ground bounce noise (unit: mV) |
transistor size | ||||
---|---|---|---|---|
2.67 nm | 10 nm | 15 nm | 20 nm | |
conventional | 4.156 | |||
tri-mode | 1.299 | 1.3 | 1.286 | 1.265 |
dual-switch | 0.883 | 0.876 | 0.890 | 0.883 |
TTH | 0.879 | 0.892 | 0.895 | 0.893 |
TTL | 0.874 | 0.905 | 0.901 | 0.899 |
Effect of temperature on ground bounce noise
Leakage current
Tab.4 Leakage current consumption (unit: nA) |
temperature | ||||||
---|---|---|---|---|---|---|
27°C | 110°C | |||||
voltage/V | 0.7 | 0.9 | 1 | 0.7 | 0.9 | 1 |
conventional | 4761 | 18250 | 27747 | 4284 | 14116 | 21475 |
Tri-mode | 27.86 | 48.42 | 89.07 | 27.43 | 53.33 | 92.46 |
dual-switch | 43.73 | 47.97 | 49.72 | 42.72 | 47.35 | 49.71 |
TTH | 43.94 | 48.15 | 50.19 | 43.14 | 47.81 | 50.03 |
TTL | 48.96 | 53.15 | 55.32 | 50.92 | 56.31 | 58.81 |
Active power
Tab.5 Active power consumption (unit: mW) |
transistor size | |||
---|---|---|---|
2.67 nm | 10 nm | 15 nm | |
conventional | 74.03 | ||
tri-mode | 27.89 | 27.93 | 27.94 |
dual-switch | 41.41 | 41.84 | 41.67 |
TTH | 41.87 | 41.77 | 41.87 |
TTL | 41.65 | 41.83 | 41.95 |
Conclusions
Tab.6 Performance comparison of different MTCMOS circuits |
primary design metric | best technique | worst technique | |
---|---|---|---|
ground bounce noise | voltage scaling | TTL | tri-mode |
transistor size | dual-switch | tri-mode | |
temperature | TTL | tri-mode | |
leakage current | 27°C, 0.7 V | tri-mode | TTL |
27°C, 0.9 V or 1 V | dual-switch | tri-mode | |
active power consumption | tri-mode | TTL |