Frontiers of Optoelectronics >

2024 , Vol. 17 >Issue 1: 10

DOI: https://doi.org/10.1007/s12200-024-00114-6

Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

  • Jian Yin 1 ,
  • David Hwang 2 ,
  • Hossein Zamani Siboni 2 ,
  • Ehsanollah Fathi 2 ,
  • Reza Chaji 2 ,
  • Dayan Ban , 1
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  • 1. Department of Electrical and Computer Engineering, Waterloo Institute Nanotechnology, University of Waterloo, Waterloo, ON N2L 3G1, Canada
  • 2. Vuereal InC, 440 Philip Street, Unit 100, Waterloo, ON N2L 5R9, Canada
dban@uwaterloo.ca

Published date: 15 Mar 2024

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2024 The Author(s) 2024
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Cite this article

Jian Yin , David Hwang , Hossein Zamani Siboni , Ehsanollah Fathi , Reza Chaji , Dayan Ban . Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes[J]. Frontiers of Optoelectronics, 2024 , 17(1) : 10 . DOI: 10.1007/s12200-024-00114-6

References

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1
Yin, J., Hwang, D., Siboni, H.Z., et al.: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes. Front. Optoelectron. 17, 8 (2024).

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