Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

Jian Yin; David Hwang; Hossein Zamani Siboni; Ehsanollah Fathi; Reza Chaji; Dayan Ban

doi:10.1007/s12200-024-00114-6

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Front. Optoelectron. ›› 2024, Vol. 17 ›› Issue (1) : 10. DOI: 10.1007/s12200-024-00114-6

CORRECTION

Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

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Jian Yin, David Hwang, Hossein Zamani Siboni, Ehsanollah Fathi, Reza Chaji, Dayan Ban. Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes. Front. Optoelectron., 2024, 17(1): 10 https://doi.org/10.1007/s12200-024-00114-6

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[1]	Yin, J., Hwang, D., Siboni, H.Z., et al.: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes. Front. Optoelectron. 17, 8 (2024). CrossRef Google scholar