Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

Jian Yin; David Hwang; Hossein Zamani Siboni; Ehsanollah Fathi; Reza Chaji; Dayan Ban

doi:10.1007/s12200-024-00114-6

Front. Optoelectron. ›› 2024, Vol. 17 ›› Issue (1) : 10 DOI: 10.1007/s12200-024-00114-6

CORRECTION

Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

Author information +

History +

PDF (1328KB)

Cite this article

Download citation ▾

Jian Yin, David Hwang, Hossein Zamani Siboni, Ehsanollah Fathi, Reza Chaji, Dayan Ban. Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes. Front. Optoelectron., 2024, 17(1): 10 DOI:10.1007/s12200-024-00114-6

登录浏览全文

4963

注册一个新账户忘记密码

References

Publishing order | Descend order by publishing year | Descend order by cited within

[1]	Yin, J., Hwang, D., Siboni, H.Z., et al.: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes. Front. Optoelectron. 17, 8 (2024).