Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

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Front. Optoelectron. ›› 2024, Vol. 17 ›› Issue (1) : 10. DOI: 10.1007/s12200-024-00114-6
CORRECTION

Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

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{{article.zuoZheEn_L}}. {{article.titleEn}}. Front. Optoelectron., 2024, 17(1): 10 https://doi.org/10.1007/s12200-024-00114-6

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