Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

Jian Yin , David Hwang , Hossein Zamani Siboni , Ehsanollah Fathi , Reza Chaji , Dayan Ban

Front. Optoelectron. ›› 2024, Vol. 17 ›› Issue (1) : 10

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Front. Optoelectron. ›› 2024, Vol. 17 ›› Issue (1) :10 DOI: 10.1007/s12200-024-00114-6
CORRECTION
Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes
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Jian Yin, David Hwang, Hossein Zamani Siboni, Ehsanollah Fathi, Reza Chaji, Dayan Ban. Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes. Front. Optoelectron., 2024, 17 (1) : 10 DOI:10.1007/s12200-024-00114-6

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Correction: Front. Optoelectron. 17, 8 (2024) https://doi.org/10.1007/s12200-024-00111-9
Following publication of the original article [1], the authors reported errors in the legend of Graphical Abstract, Figure 2 and Figure 3.
The Graphical Abstract has been updated from:
To:
Figure 2 has been updated from:
To:
Figure 3 has been updated from:
To:
The original article [1] has been updated.
The original article can be found online at https://doi.org/10.1007/s12200-024-00111-9.

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[1]

Yin, J., Hwang, D., Siboni, H.Z., et al.: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes. Front. Optoelectron. 17, 8 (2024). https://doi.org/10.1007/s12200-024-00111-9

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