Dalapati et al. [
30] provides another possible synthesis route for forming Si
1-y C
y layer. Samples of rapid thermal were annealed in QUPLAS reactor under flowing nitrogen at 1046°C for 30 s. In order to study the electrical characteristics of the TiO
2 films deposited on strained Si
1-y C
y layers, MIS structures were fabricated with Al gate (area: 1.96×10
-3cm
-2). A separation of 5.6 eV between two peaks of Ti 2P confirms the formation of TiO
2. Inversion capacitance of the MIS capacitors is found to increase with the increase in carbon concentration due to an increase of donor like centers in the Si
1-y C
y layers. The value of
Dit was found to be 1.5×10
12 cm
2/eV for the continuum model. The current-voltage characteristics of the MIS capacitors were measured and observed that the current density (
J) at 1 V is 10
-5 A/cm
2 increases sharply with bias and then almost saturates. The leakage current has been found to be dominated by the SE at a low electric field, whereas PF emission takes over at higher electric field. So may be used for the next generation metal oxide semiconductor field effect transistors [
30]. Zhang and Han [
31] discussed the TiO
2 anatase thin films of 1000 nm were deposited by dielectric barrier discharge enhanced chemical vapor deposition (DBD-CVD) method at 400°C for glass substrate under working pressures from 200 Pa to atmospheric pressure. The film surface is closely covered by small Particles with size about 20–50 nm but the TiO
2 film deposited at 2000 Pa with size about 100–200 nm. Depending on discharge conditions, different kinds of discharges can be generated, like glow-like discharge, corona- like discharge, or filamentary streamers. The glow-like discharge could produce more homogeneous transient plasma and it normally appears at lower pressure. Obviously it cannot be useful for microelectronics application but suitable for display devices and photo detectors. Ivan et al. [
32] presented nanocrystalline Tatiana thin films deposited at ambient temperature by DC magnetron sputtering, the triangular columnar grains of the order of 70–100 nm were obtained at 400°C with pressure of 32 m Torr. The anatase and rutile films of thickness of the order of 500 nm were reported. The refractive index of the films deposited at different O
2 partial pressure was between 1.8 and 2.25 in the dispersion free region. The optical band gap values to lie between 3.3 and 3.5 eV. The band gap values for anatase TiO
2 is 3.20 eV and up to 3.70 eV have been reported for the amorphous phase. The results presented that the refractive index and crystallite size decrease with an increase in the percentage of oxygen in the sputtering environment. The band gap increase with decrease in crystallite size, which is frequently deemed to indicate the onset of quantum confinement effects, light-emitting diode (LED), etc. These may be quite expensive when large-scale production is needed. It is one of the most promising gas-sensing materials due to its high temperature stability, harsh environment tolerance and catalytic properties. Bendavid et al. [
33] deposited thin films of titanium dioxide on conducting (100) silicon wafers by filtered arc deposition. The refractive index values of the amorphous, anatase and rutile films were found to be 2.56, 2.62 and 2.72 at wavelength of 550 nm, respectively. The morphology of TiO
2 on silicon substrates changes from anatase to amorphous and then to rutile phase without auxiliary heating and, by using an appropriate substrate bias. The author reported that the densities of TiO
2 films had a significant effect on the optical and mechanical properties. The effect of surface morphology of the electrodeposited TiO
2 was studied by changing the precursor concentrations of the electrochemical bath. It can be a promising as a preparation method for industrial applications. Ohsaka et al. [
34] obtained the TiO
2 layers of anatase phase, well-adhered, homogenous, with good secularity and colored by interference of reflected light. Their thickness was in the range of 100±500 nm. Microwave heating required short times, low temperatures and is relatively inexpensive. TiO
2 films on conducting glass were used in new types of solar cells. However, all above methods have high costs, and the preparation of films in a large area is technically difficult. Recently, wet processes, such as sol-gel and electrochemical deposition, have emerged as an alternative route for the preparation of the crystalline TiO
2 thin films.