In this paper, we focused on the applications of InGaN QD LEDs. As is well known, “green gap” is a troublesome problem in the research area of LEDs [
4]. Many publications reported the measures of overcoming “green gap” by changing the InGaN growth plane of QW structure from the c-plane to nonpolar [
4–
6] or semipolar planes [
7–
10]. Although great progress has been made in the nonpolar and semipolar LEDs, there are still some shortcomings. Nonpolar and semipolar growth of InGaN on sapphire substrate made higher density of dislocations and stacking faults than traditional c-plane [
11,
12]. On the other hand, in order to improve the crystal quality, expensive nonpolar and semipolar GaN substrates are desired [
13], but it is still difficult to obtain large size of nonpolar and semipolar GaN substrates. Therefore, the nonpolar and semipolar LEDs cost significantly higher than c-plane. In addition, although the polarization field can be ignored in nonpolar or semipolar InGaN/GaN multiple QWs, considering the large lattice mismatch between InGaN and GaN, this will lead to much strain, especially when InGaN QWs are wide or composition of indium is high.