Frontiers of Optoelectronics >

2010 , Vol. 3 >Issue 3: 328 - 331

DOI: https://doi.org/10.1007/s12200-010-0096-7

Research articles

Aged rare earth doped silicates as optoelectronic material

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  • 1.Department of Physics, Government College, Ajmer 334001, India; 2.Emeritus Scientist, Department of Physics, Indian Institute of Technology, Kharagpur 721302, India; 3.Principal, BMIT, Jaipur 302022, India; 4.Chino Scientific Instruments Manufacturing, Ajmer 305004, India;

Published date: 05 Sep 2010

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Abstract

Samples of various concentrations were prepared and kept unsintered for a period of three years to study the consistency of composition prepared and structural evolution of glass. The expanded peaks in the Raman spectra arise due to thermal agitation, and a Boltzmann type of distribution was expected in the silicate gels. The behavior of the gels during the dehydroxylation and dehydration is conditioned by its microstructure, which depends upon the physical conditions, i.e., pH, and drying conditions.

Cite this article

Vandana RANGA, H. N. ACHARYA, R. K. KHANNA, Anirudh KUMAR, . Aged rare earth doped silicates as optoelectronic material[J]. Frontiers of Optoelectronics, 2010 , 3(3) : 328 -331 . DOI: 10.1007/s12200-010-0096-7

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