Aged rare earth doped silicates as optoelectronic
material
Vandana RANGA1,H. N. ACHARYA2,R. K. KHANNA3,Anirudh KUMAR4,
Author information+
1.Department of Physics,
Government College, Ajmer 334001, India; 2.Emeritus Scientist, Department
of Physics, Indian Institute of Technology, Kharagpur 721302, India; 3.Principal, BMIT, Jaipur
302022, India; 4.Chino Scientific Instruments
Manufacturing, Ajmer 305004, India;
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History+
Published
05 Sep 2010
Issue Date
05 Sep 2010
Abstract
Samples of various concentrations were prepared and kept unsintered for a period of three years to study the consistency of composition prepared and structural evolution of glass. The expanded peaks in the Raman spectra arise due to thermal agitation, and a Boltzmann type of distribution was expected in the silicate gels. The behavior of the gels during the dehydroxylation and dehydration is conditioned by its microstructure, which depends upon the physical conditions, i.e., pH, and drying conditions.
Vandana RANGA, H. N. ACHARYA, R. K. KHANNA, Anirudh KUMAR,.
Aged rare earth doped silicates as optoelectronic
material. Front. Optoelectron., 2010, 3(3): 328‒331 https://doi.org/10.1007/s12200-010-0096-7
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