Aged rare earth doped silicates as optoelectronic material

Vandana RANGA1,H. N. ACHARYA2,R. K. KHANNA3,Anirudh KUMAR4,

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PDF(194 KB)
Front. Optoelectron. ›› 2010, Vol. 3 ›› Issue (3) : 328-331. DOI: 10.1007/s12200-010-0096-7
Research articles
Research articles

Aged rare earth doped silicates as optoelectronic material

  • Vandana RANGA1,H. N. ACHARYA2,R. K. KHANNA3,Anirudh KUMAR4,
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Abstract

Samples of various concentrations were prepared and kept unsintered for a period of three years to study the consistency of composition prepared and structural evolution of glass. The expanded peaks in the Raman spectra arise due to thermal agitation, and a Boltzmann type of distribution was expected in the silicate gels. The behavior of the gels during the dehydroxylation and dehydration is conditioned by its microstructure, which depends upon the physical conditions, i.e., pH, and drying conditions.

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Vandana RANGA, H. N. ACHARYA, R. K. KHANNA, Anirudh KUMAR,. Aged rare earth doped silicates as optoelectronic material. Front. Optoelectron., 2010, 3(3): 328‒331 https://doi.org/10.1007/s12200-010-0096-7
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