Frontiers of Optoelectronics >

2010 , Vol. 3 >Issue 3: 241 - 244

DOI: https://doi.org/10.1007/s12200-010-0109-6

Research articles

InAs/GaAs quantum dots grown on different GaAs substrates with graded In x Ga 1? x As strain-reducing layer

Expand
  • Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;

Published date: 05 Sep 2010

Fold

Abstract

Self-assembled InAs quantum dots with graded composition strain-reducing layer (SRL) grown on exact substrates were studied. It is shown that a graded InxGa1−xAs SRL leads to growth quality improvement, emission efficiency enhancement, and wavelength blueshift. Samples grown on 2° misoriented substrates with different In contents in graded InxGa1−xAs SRL were also investigated, and emission efficiency enhancement and wavelength blueshift were found when graded SRL was introduced and when the change rate of In content in graded InxGa1−xAs SRL was enlarged.

Cite this article

Shuping FEI, Zhongwei SHI, Lirong HUANG, . InAs/GaAs quantum dots grown on different GaAs substrates with graded In x Ga 1? x As strain-reducing layer[J]. Frontiers of Optoelectronics, 2010 , 3(3) : 241 -244 . DOI: 10.1007/s12200-010-0109-6

Options
Outlines

/

〈 〉