InAs/GaAs quantum dots grown on different GaAs substrates with graded In x Ga 1? x As strain-reducing layer

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Front. Optoelectron. ›› 2010, Vol. 3 ›› Issue (3) : 241-244. DOI: 10.1007/s12200-010-0109-6
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InAs/GaAs quantum dots grown on different GaAs substrates with graded In x Ga 1? x As strain-reducing layer

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{{article.zuoZheEn_L}}. {{article.titleEn}}. Front. Optoelectron., 2010, 3(3): 241‒244 https://doi.org/10.1007/s12200-010-0109-6

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