Gas pressure-sensitive regulation of exciton state of monolayer tungsten disulfide

  • Shuangping Han 1 ,
  • Pengyu Zan 1 ,
  • Yu Yan 1 ,
  • Yaoxing Bian 1 ,
  • Chengbing Qin , 2 ,
  • Liantuan Xiao , 1,2
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  • 1. College of Physics, Taiyuan University of Technology, Taiyuan 030024, China
  • 2. State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan 030006, China
chbqin@sxu.edu.cn
xlt@sxu.edu.cn

Received date: 05 Mar 2024

Accepted date: 11 May 2024

Copyright

2024 Higher Education Press

Abstract

Over the past few decades, significant progress has been made in thin-film optoelectronic devices based on transition metal dichalcogenides. However, the exciton states' sensitivity to the environment presents challenges for device applications. This study reports the evolution of photoinduced exciton states in monolayer tungsten disulfide in a low-pressure environment to help elucidate the physical mechanism of the transition between neutral and charged excitons. At 222 mTorr, the transition rate between excitons comprises two components: 0.09 s–1 and 1.68 s–1. Based on this phenomenon, we developed a pressure-tuning method that allows for a tuning range of approximately 40% of exciton weight. Our study demonstrates that the intensity of neutral exciton emission from monolayer tungsten disulfide follows a power-law distribution in relation to pressure, indicating a highly sensitive pressure dependence. We provide a nondestructive and highly sensitive method for exciton conversion through in situ optical manipulation. This highlights the potential development of monolayer tungsten disulfide for pressure sensors and explains the impact of environmental factors on the product quality in photovoltaic devices. In addition, it demonstrates the promising future of monolayer transition metal dichalcogenides in applications such as photovoltaic devices and miniature biochemical sensors.

Cite this article

Shuangping Han , Pengyu Zan , Yu Yan , Yaoxing Bian , Chengbing Qin , Liantuan Xiao . Gas pressure-sensitive regulation of exciton state of monolayer tungsten disulfide[J]. Frontiers of Chemical Science and Engineering, 2024 , 18(11) : 131 . DOI: 10.1007/s11705-024-2483-4

Competing interests

The authors declare that they have no competing interests.

Acknowledgements

The authors gratefully acknowledge the support from the National Key Research and Development Program of China (Grant No. 2022YFA1404201) and the National Natural Science Foundation of China (Grant Nos. U23A20380, U22A2091, 62222509, 62127817, and 6191101445), the Shanxi Province Science and Technology Innovation Talent Team (Grant No. 202204051001014), 111 Projects (Grant No. D18001), and Shanxi Provincial Basic Research Program Project (Grant Nos. 202203021222107 and 202203021222133).

Electronic Supplementary Material

Supplementary material is available in the online version of this article at https://doi.org/10.1007/s11705-024-2483-4 and is accessible for authorized users.
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