Design and realization of InP/AlGaInAs multiple quantum well ring laser

Abstract

Using beam propagation method (BPM), key optical design parameters of InP/AlGaInAs multiple quantum well (MQW) ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radius and gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm was designed and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side mode suppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwise modes.

Keywords

semiconductor laser / multiple quantum well / optical bistability / AlGaInAs

References

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