Dynamic control of on-site potentials is key to controlling band structures and light transport in lattice systems. Here, we demonstrate a dynamically tunable binary photonic lattice in a four-level atomic system, formed by superimposing two standing-wave fields with a 1:2 period ratio, under far-detuned electromagnetically induced transparency. In this regime, absorption is strongly suppressed, and the refractive-index response is dominated by its dispersive component. By tuning the laser frequency detuning, we continuously reshape the refractive-index contrast between two sublattices, enabling all-optical control of the on-site potentials. This control drives a clear reconfiguration of the optical modes, whereby the probe field shifts its concentration in real space, accompanied by an alternating distribution of reciprocal-space energy between the first- and second-order diffraction channels. Our results demonstrate a low-loss route to on-demand mode reconfiguration, opening new possibilities for programmable light steering and reconfigurable photonic functions in atomic media.

Spatiotemporal mode-locked (STML) fiber lasers have garnered significant interest in recent years for their unique ability to generate high-energy ultrashort pulses while simultaneously supporting complex transverse field structures. In particular, the formation of soliton molecules opens new avenues for ultrafast signal processing, high-bit-rate optical communications, and precision metrology. In this work, we presented a mode-resolved investigation into the birth, temporal evolution, and nonlinear dynamics of multiple soliton molecules in an all-fiber STML laser. Additionally, our mode-resolved analysis revealed that the transverse modes evolved synchronously during soliton-molecule formation while maintaining a relatively stable modal energy distribution. We further observed that both pulse spacing and relative phase gradually converged to constant values after a transient stage, indicating the formation of stable soliton molecules sustained by the balance among dispersion, nonlinearity, and gain-loss dynamics. Our study not only advances fundamental understanding of multi-soliton physics in complex laser cavities but also provides a numerical basis for engineering tailored spatiotemporal soliton molecules with controllable molecular order, spacing, and stability.

Rapid detection and precise characterization of color centers in semiconductor materials have become pivotal challenges in advancing color-center-based quantum technologies. Here, we propose a non-invasive near-field detection scheme that employs a silica nanofiber as a one-dimensional waveguide for fluorescence collection and rapid detection of color centers in bulk materials. Using three-dimensional finite-difference time-domain (FDTD) simulations, we systematically investigate the influence of key parameters on collection efficiency \eta, including the nanofiber diameter, the distance between the nanofiber and the sample, and the depth of the color center within the bulk material. For two representative color centers, the silicon vacancy in 4H-SiC and the nitrogen-vacancy center in diamond, the optimized peak collection efficiencies are 0.22% and 0.18%, respectively. Unlike previous studies where silica nanofibers were employed for color centers in nanoparticles or free-space emitters, this work extends the application of silica nanofibers to the detection of color centers in high-index bulk materials. The proposed scheme enables one-dimensional line detection that can be extended to two-dimensional planar scanning, allowing rapid, high-throughput and non-invasive characterization. It is inherently compatible with fiber-optic systems and adaptable to various color centers in different host bulk materials. In summary, this work provides a new technical route and comprehensive theoretical parameter guidance for non-invasive, integrable, high-throughput detection of color centers in bulk materials, paving the way for all-fiber integrated quantum photonics.

Two-dimensional (2D) materials hold great potential for next-generation electronic devices due to high mobility and excellent interface quality. However, device fabrication processes significantly influence the final device performance, in which the photoresist residue could increase the carrier scattering and contact resistance, and the metallization process would damage the ultrathin channels. Our study aims to optimize fabrication techniques for reducing the multiple process factors to achieve the desired performance of 2D materials. By comparing the performance of devices fabricated using double-layer and single-layer photoresist processes, we demonstrate the critical role of interface cleanliness between the metal and 2D material in improving device characteristics. A strong correlation between evaporation rate and contact resistance was systematically investigated by thermal evaporation of metals at various deposition rates, which confirmed the thermal radiation generated during evaporation can be largely reduced, under the selection of an appropriate evaporation rate to minimize such damage. Additionally, we investigate the different device configurations and find that the extent of gate coverage over the channel and clearer interface between electrode and dielectric layer in 2D field-effect transistors (FETs) significantly affect transfer characteristics. The approaches presented in this work facilitate the realization of high-performance 2D FETs and promote the integration of 2D materials into electronic circuits and devices.

Most existing hardware based on the von Neumann architecture inherently features a single readout, which limits multifunctional capabilities in advanced computing systems. Here, we report a wavelength-selective dual-channel coupling transistor based on an MoS₂ channel and ferro-photoactive CuInP₂S₆ (CIPS) gate, which simultaneously generates horizontal source–drain (I_ds) and vertical gate-source (I_gs) dual readouts under optical illumination. Under 532 nm and 405 nm illumination, the device exhibits wavelength-dependent synaptic response polarity: the I_ds current mimics the center-excitatory pathway of bipolar cells, while the I_gs current mimics the surround-inhibitory pathway of horizontal cells, enabling bio-inspired in-sensor neuromorphic perception. Moreover, the wavelength-selective dual readouts enable reconfigurable XOR and AND optical logic operations within a single device, allowing it to function as an all-optical half-adder. This reduces the component count by 91.7% compared with CMOS-based circuits. Our device integrates sensing, neuromorphic preprocessing, and arithmetic logic within a single hardware unit, paving the pathway toward compact, energy-efficient vision systems.

In this study we systematically investigate the influence of grain size on the performance of lead-free CsSnI₃ perovskite solar cells and the underlying physical mechanisms. Using a weighted-average approach, we calculate the electron and hole mobilities as functions of grain size, and develop a grain-boundary defect model based on the Matthiessen rule to establish a quantitative correlation between grain size and defect density. These extracted mobility and defect parameters are then imported into SCAPS-1D to construct a TiO₂/CsSnI₃/Spiro-OMeTAD planar heterojunction device, enabling a comprehensive analysis of how grain size modulates the optimization of absorber thickness, doping concentration, and interface defect tolerance. Our results show that enlarging grain size significantly enhances carrier mobility and reduces defect density, thereby effectively suppressing non-radiative recombination and improving charge extraction efficiency. The maximum power conversion efficiency (PCE) decreases from 17.82% for single-crystalline CsSnI₃ to 17.75%, 17.29, 12.59, 5.06, and 0.65% for grain sizes of 100, 10, 1, 0.1, and 0.01 μm, respectively. Devices with larger grains exhibit greater tolerance to both thicker absorbers and interface defects, whereas their smaller-grain counterparts suffer from pronounced recombination losses and heightened parametric sensitivity. Notably, defects at the electron transport layer (ETL) /CsSnI₃ interface are found to have a more detrimental effect on device performance than those at the CsSnI₃/hole transport layer (HTL) interface. Overall, this work elucidates the intrinsic mechanisms by which grain size governs CsSnI₃ device performance, providing a theoretical basis for the structural optimization of high-performance lead-free perovskite photovoltaics.

We propose and investigate an all-electrically controlled Josephson diode effect in a hybrid junction consisting of a quantum anomalous Hall insulator (QAHI) sandwiched between two topological superconductors (TSCs). Due to the spatial separation of two paired electrons from the chiral edge states, a transverse electric field applied across the two TSC leads imposes different energies on two paired electrons and modifies the spectrum of chiral Andreev bound states, consequently generating a sizable nonreciprocal supercurrent without the need for external magnetic fields. We further demonstrate two additional electrical control mechanisms: (i) tuning the chemical potential enhances the diode response by separating the superconducting gap from finite-size-induced gaps; and (ii) applying asymmetric electric fields to the two TSC leads enables precise and continuous modulation of the diode efficiency while preserving its polarity. The induced diode effect is shown to be robust against moderate disorders. Our results establish electrostatic gating as a powerful and practical approach to engineer and control nonreciprocal superconducting transport, providing a general framework for realizing electrically tunable topological Josephson diodes.

Interlayer stacking dependence of polarization remains a critical bottleneck for 2D vdW ferroelectrics in nanoelectronics. Herein, first-principles calculations reveal stacking-insensitive ferroelectricity in layered ScPS₃, driven by out-of-plane perturbation of the P–P dimers. Unlike conventional ion-displacement ferroelectrics such as CuInP₂S₆, where polarization comes from metal-ion off-centering, the polarization of ScPS₃ arises from local ionic displacement within the P–P dimers together with the the P lone pairs. This polarization originates from the intralayer asymmetry of the monolayer and remains nearly unchanged for different stacking orders (AA, AB), circumventing the stringent fabrication tolerances of sliding ferroelectrics. Although the antiferroelectric (AFE) phase is identified as the thermodynamic ground state and the ferroelectric (FE) phase is metastable at zero strain, biaxial strain beyond ±6% stabilizes the FE phase and enables a reversible AFE-to-FE phase transition. Together with the low switching barriers and the stacking-independent polarization (~0.73–0.74 μC/cm²), these results establish ScPS₃ as a versatile platform for strain-engineered memories and flexible optoelectronics.

Tagged hyperon and antineutron beams from J/\psi and \psi (3686) decays allow BESIII to study (anti)hyperon–nucleon (YN) and antineutron–nucleon (\overline{n}N) scattering, but the present measurements use the beam pipe as the target, whose only free protons are in a thin cooling-oil layer. We present a conceptual feasibility study of a liquid hydrogen (LH₂) or liquid deuterium (LD₂) target between the beam pipe and the Cylindrical Gas Electron Multiplier Inner Tracker. Relative to the beam pipe, a 30 mm LH₂ layer increases the effective free-proton areal density by factors of 7–22 for \mathrm{\Lambda }, {\mathrm{\Sigma }}^{+}, \mathrm{\Xi }, and \overline{n} beams (3.4 for {\mathrm{\Omega }}^{-}). A 30 mm LD₂ layer gives 0.9–2.9 times the effective neutron areal density for the same beams (0.4 for {\mathrm{\Omega }}^{-}) and replaces the composite Be, C, and Au nuclei with the deuteron. These ratios characterize the target itself and do not include channel-dependent efficiencies, backgrounds, or deuteron corrections. In detector simulations without localized support material, the target affects tracking mainly below 0.5 GeV/c; above this momentum, proton, kaon, and pion efficiencies stay within 1.6% of the baseline. In a signal-only full-event simulation of \overline{n}p\to 2{\pi }^{+}{\pi }^{-}, the LH₂-to-beam-pipe selection-efficiency ratio is 0.86, and the vertex and energy-closure resolutions are comparable to those for beam-pipe interactions. An internal LH₂/LD₂ target is thus a promising concept for higher-statistics and less model-dependent YN and \overline{n}N measurements at BESIII, requiring further engineering and channel-level validation.