Revealing the influence of multiple process factors on 2D field-effect transistors performance

Abstract

Two-dimensional (2D) materials hold great potential for next-generation electronic devices due to high mobility and excellent interface quality. However, device fabrication processes significantly influence the final device performance, in which the photoresist residue could increase the carrier scattering and contact resistance, and the metallization process would damage the ultrathin channels. Our study aims to optimize fabrication techniques for reducing the multiple process factors to achieve the desired performance of 2D materials. By comparing the performance of devices fabricated using double-layer and single-layer photoresist processes, we demonstrate the critical role of interface cleanliness between the metal and 2D material in improving device characteristics. A strong correlation between evaporation rate and contact resistance was systematically investigated by thermal evaporation of metals at various deposition rates, which confirmed the thermal radiation generated during evaporation can be largely reduced, under the selection of an appropriate evaporation rate to minimize such damage. Additionally, we investigate the different device configurations and find that the extent of gate coverage over the channel and clearer interface between electrode and dielectric layer in 2D field-effect transistors (FETs) significantly affect transfer characteristics. The approaches presented in this work facilitate the realization of high- performance 2D FETs and promote the integration of 2D materials into electronic circuits and devices.

Keywords

2D field-effect transistors / MoS₂ / high-κ CaNb₂O₆ / photoresist residue / metal evaporation / performance modulation

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Higher Education Press 2026

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