Photoelectrochemical behaviour of CdIn₂S₄ films deposited by pulse electrodeposition using non-aqueous electrolyte

Abstract

CdIn₂S₄ films were deposited by the pulse electrodeposition technique on tin oxide-coated glass substrates, at different duty cycles in the range of 6%--50%. The deposition potential was--0.7 V vs. saturated calomel electrode (SCE) using non-aqueous di(ethylene glycol) electrolyte. XRD analysis of the films indicated polycrystalline nature. Grain size, strain and dislocation density were evaluated from the XRD data. EDX analysis of the surface composition confirms the formation of stoichiometric CdIn₂S₄ films. Optical studies show a direct band-gap values in the range of 2.14--2.23 eV for the films deposited at different duty cycles. Room temperature resistivity of the films was in the range of 40--21 Ω·cm with the increase of duty cycle. Photoelectrochemical (PEC) solar cells constructed with the films deposited at 50% duty cycle and post-heat-treated at 500°C indicated open circuit voltage (V_oc) of 0.595 V, short circuit current density (J_sc) of 6.20 mA·cm^-2, fill factor (ff) of 0.61, efficiency (η) of 3.75%, series resistance (R_s) of 4 Ω and shunt resistance (R_sh) of 2.50 kΩ. Making use of the advantages of pulse electrodeposition it can be used to deposit nanocrystalline films which can be employed in optoelectronic and photovoltaic devices.

Keywords

thin film / semiconductor / CdIn₂S₄ / photoelectrochemical (PEC) cell

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