Research articles

High-speed, all-optical XOR gates using semiconductor optical amplifiers in ultrafast nonlinear interferometers

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  • 1.The State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University, Shanghai 200240, China;Photonic Systems Group, Tyndall National Institute, University College Cork, Cork, Ireland; 2.The State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University, Shanghai 200240, China;

Published date: 05 Sep 2010

Abstract

We will review three recently-proposed high-speed, all-optical Exclusive OR (XOR) gates operating at 40 and 85 Gb/s, which were demonstrated using ultrafast nonlinear interferometers (UNIs) incorporating semiconductor optical amplifiers (SOAs). The first 40-Gb/s XOR gate was obtained using a dual UNI configuration. The second is a 40-Gb/s XOR gate without additional probe beam required, where the only inputs launched into the setup were data A and B. The XOR logic of data A and B is the sum of two components "Graphic" and "Graphic", each of which was obtained from the output of UNI via cross-phase modulation (XPM) in SOAs. Furthermore, an 85-Gb/s XOR gate is, by far, the fastest XOR gate realized by SOAs, which was also demonstrated using a dual UNI structure. The operating speed of the XOR gate was enhanced by incorporating the recently proposed turbo-switch configuration. In addition, the SOA switching pulse energies of these XOR gates were lower than 100fJ.

Cite this article

Xuelin YANG, Qiwei WENG, Weisheng HU, . High-speed, all-optical XOR gates using semiconductor optical amplifiers in ultrafast nonlinear interferometers[J]. Frontiers of Optoelectronics, 2010 , 3(3) : 245 -252 . DOI: 10.1007/s12200-010-0105-x

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