Design of an on-chip wavelength conversion device assisted by an erbium-ytterbium co-doped waveguide amplifier

Abstract

In current documented studies, it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2 µm band, generally falling below –20.0 dB. To address this issue, we present a novel wavelength conversion device assisted by a waveguide amplifier, incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier, thereby achieving a notable conversion efficiency exceeding 0 dB. The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter, which enables an upsurge in conversion efficiency to –15.54 dB under 100 mW of pump power. Furthermore, the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB. Avoiding the use of external optical amplifiers, this device enables efficient and high-bandwidth wavelength conversion, showing promising applications in various fields, such as optical communication, sensing, imaging, and beyond.

Graphical abstract

Keywords

Silicon-based optoelectronics / Wavelength conversion / Waveguide amplifier / 2 µm band

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