Sb₂Se₃ film with grain size over 10 μm toward X-ray detection

Abstract

Direct X-ray detectors are considered as competitive next-generation X-ray detectors because of their high spatial resolution, high sensitivity, and simple device configuration. However, their potential is largely limited by the imperfections of traditional materials, such as the low crystallization temperature of α-Se and the low atomic numbers of α-Si and α-Se. Here, we report the Sb₂Se₃ X-ray thin-film detector with a p–n junction structure, which exhibited a sensitivity of 106.3 µC/(Gy_air·cm²) and response time of <2.5 ms. This decent performance and the various advantages of Sb₂Se₃, such as the average atomic number of 40.8 and μτ product (μ is the mobility, and τ is the carrier lifetime) of 1.29 × 10⁻⁵ cm²/V, indicate its potential for application in X-ray detection.

Graphical abstract

Keywords

X-ray detector / Sb₂Se₃ / p–n junction / response speed / grain size

References

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 61725401 and 61904058), the National Key R&D Program of China (No. 2016YFA0204000), the Innovation Fund of Wuhan National Laboratory for Optoelectronics (WNLO), the National Postdoctoral Program for Innovative Talent (No. BX20190127), and China Postdoctoral Science Foundation Project (No. 2019M662623). The authors thank the Analytical and Testing Center of Huazhong University of Science and Technology (HUST) and the facility support of the Center for Nanoscale Characterization and Devices, WNLO-HUST.

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