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Frontiers of Optoelectronics

Front. Optoelectron.    2020, Vol. 13 Issue (3) : 282-290     https://doi.org/10.1007/s12200-020-1046-7
RESEARCH ARTICLE
Composition engineering to obtain efficient hybrid perovskite light-emitting diodes
Chuanzhong YAN, Kebin LIN, Jianxun LU, Zhanhua WEI()
Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
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Abstract

Metal halide perovskites have received considerable attention in the field of electroluminescence, and the external quantum efficiency of perovskite light-emitting diodes has exceeded 20%. CH3NH3PbBr3 has been intensely investigated as an emitting layer in perovskite light-emitting diodes. However, perovskite films comprising CH3NH3PbBr3 often exhibit low surface coverage and poor crystallinity, leading to high current leakage, severe nonradiative recombination, and limited device performance. Herein, we demonstrate a rationale for composition engineering to obtain high-quality perovskite films. We first reduce pinholes by adding excess CH3NH3Br to the actual CH3NH3PbBr3 films, and we then add CsBr to improve the crystalline quality and to passivate nonradiative defects. As a result, the (CH3NH3)1−xCsxPbBr3 based perovskite light-emitting diodes exhibit significantly improved external quantum and power efficiencies of 6.97% and 25.18 lm/W, respectively, representing an improvement in performance dozens of times greater than that of pristine CH3NH3PbBr3-based perovskite light-emitting diodes. Our study demonstrates that composition engineering is an effective strategy for enhancing the device performance of perovskite light-emitting diodes.

Keywords perovskite      light-emitting diode (LED)      composition engineering      ion doping     
Corresponding Author(s): Zhanhua WEI   
Just Accepted Date: 14 July 2020   Online First Date: 06 August 2020    Issue Date: 27 September 2020
 Cite this article:   
Chuanzhong YAN,Kebin LIN,Jianxun LU, et al. Composition engineering to obtain efficient hybrid perovskite light-emitting diodes[J]. Front. Optoelectron., 2020, 13(3): 282-290.
 URL:  
https://journal.hep.com.cn/foe/EN/10.1007/s12200-020-1046-7
https://journal.hep.com.cn/foe/EN/Y2020/V13/I3/282
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Chuanzhong YAN
Kebin LIN
Jianxun LU
Zhanhua WEI
Fig.1  MABr additive enhances the perovskite film quality and the corresponding device performance. (a) Distribution of CE of the Pero-LEDs. (b) PL spectra of the perovskite films with inset of an image of perovskite films (1: MAPbBr3, 2: MAPbBr3-excess) under UV illumination (365 nm). SEM images of (c) MAPbBr3 and (d) MAPbBr3-excess perovskite films (pinholes are indicated by red circles). (e) XRD patterns of the perovskite films. (f) Current densityluminancevoltage (L–J–V) curves of the best-performing Pero-LEDs
Fig.2  CsBr doping improves the film quality. (a) Schematic of crystal structure of the MAPbBr3 doped with CsBr. (b) PL spectra of the perovskite films, inset is an image of perovskite films (1: MAPbBr3-excess, 2: MAPbBr3-excess:CsBr= 1:0.4, 3: MAPbBr3-excess:CsBr= 1:0.8, 4: MAPbBr3-excess:CsBr= 1:1.2) under UV illumination (365 nm). (c) (αhn)2-photon energy (eV) curve of the perovskite films. (d) XRD patterns of the perovskite films. (e) Partially magnified XRD patterns showing (100) and (200) peaks
Fig.3  SEM images of perovskite films. (a) MAPbBr3-excess. (b) MAPbBr3-excess:CsBr= 1:0.4. (c) MAPbBr3-excess:CsBr= 1:0.8. (d) MAPbBr3-excess:CsBr= 1:1.2 (Apparent cracks in images are caused by the electron-beam irradiation during SEM)
Fig.4  Fabrication and performance evaluation of Pero-LEDs devices. (a) Schematic diagram of the Pero-LEDs devices. (b) Energy-level diagram of the Pero-LEDs devices. (c) J–V curves. (d) L–V curves. (e) Distribution of the CE of the Pero-LEDs fabricated with different perovskites. (f) Electroluminescence spectra at different driving voltages of the Pero-LEDs based on MAPbBr3-excess:CsBr = 1:0.8
molar ratio of MAPbBr3-excess:CsBr Lmax/(cd·m−2) CEmax/(cd·A−1) EQEmax/% Von/V PEmax/(lm·W−1)
1:0 4452 2.46 0.63 ~2.8 2.12
1:0.4 13,450 8.23 2.21 ~2.6 6.06
1:0.8 15,059 25.80 6.97 ~2.4 25.18
1:1.2 13,720 17.99 4.84 ~2.4 14.13
Tab.1  EL parameters of the Pero-LEDs with different molar ratios of MAPbBr3-excess:CsBr
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