Novel optoelectronic characteristics from manipulating general energy-bands by nanostructures
Yidong HUANG, Kaiyu CUI, Fang LIU, Xue FENG, Wei ZHANG
Novel optoelectronic characteristics from manipulating general energy-bands by nanostructures
This paper summarizes our research work on optoelectronic devices with nanostructures. It was indicated that by manipulating so called “general energy-bands” of fundamental particles or quasi-particles, such as photon, phonon, and surface plasmon polariton (SPP), novel optoelectronic characteristics can be obtained, which results in a series of new functional devices. A silicon based optical switch with an extremely broadband of 24 nm and an ultra-compact (8 mm × 17.6 mm) footprint was demonstrated with a photonic crystal slow light waveguides. By proposing a nanobeam based hetero optomechanical crystal, a high phonon frequency of 5.66 GHz was realized experimentally. Also, we observed and verified a novel effect of two-surface-plasmon-absorption (TSPA), and realized diffraction-limit-overcoming photolithography with resolution of ~1/11 of the exposure wavelength.
photonic crystal waveguide (PCWG) / optomechanical crystal / surface plasmon polariton (SPP) / two-surface-plasmon-absorption (TSPA)
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