Lasing characteristics of curved semiconductor nanowires

Weisong YANG, Yipei WANG, Yaoguang MA, Chao MENG, Xiaoqin WU, Qing YANG

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PDF(263 KB)
Front. Optoelectron. ›› 2013, Vol. 6 ›› Issue (4) : 448-451. DOI: 10.1007/s12200-013-0344-8
RESEARCH ARTICLE
RESEARCH ARTICLE

Lasing characteristics of curved semiconductor nanowires

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Abstract

The characteristics of curved semiconductor nanowire (NW) lasers were investigated. The red-shift in the laser spectra with increasing bending angles can be observed much more clearly than that in the photoluminescence (PL) spectra. Due to oscillation of light in resonant cavity, the bending loss of laser exhibits multiple times amplification of that of PL. Furthermore, an abnormal phenomenon of dominant peak switching is found in curved NWs when increasing the pump power, which has been first discovered and reported.

Keywords

semiconductor nanowire / lasing characteristics / red-shift / bending loss / dominant peaks

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Weisong YANG, Yipei WANG, Yaoguang MA, Chao MENG, Xiaoqin WU, Qing YANG. Lasing characteristics of curved semiconductor nanowires. Front Optoelec, 2013, 6(4): 448‒451 https://doi.org/10.1007/s12200-013-0344-8

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 61177062), the Program for Zhejiang Leading Team of S&T Innovation, the Fundamental Research Funds for the Central Universities.

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2014 Higher Education Press and Springer-Verlag Berlin Heidelberg
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