Please wait a minute...

Frontiers of Optoelectronics

Front Optoelec    2013, Vol. 6 Issue (4) : 448-451
Lasing characteristics of curved semiconductor nanowires
Weisong YANG1, Yipei WANG1, Yaoguang MA2, Chao MENG1, Xiaoqin WU1, Qing YANG1()
1. State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering, Zhejiang University, Hangzhou 310027, China; 2. State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
Download: PDF(263 KB)   HTML
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

The characteristics of curved semiconductor nanowire (NW) lasers were investigated. The red-shift in the laser spectra with increasing bending angles can be observed much more clearly than that in the photoluminescence (PL) spectra. Due to oscillation of light in resonant cavity, the bending loss of laser exhibits multiple times amplification of that of PL. Furthermore, an abnormal phenomenon of dominant peak switching is found in curved NWs when increasing the pump power, which has been first discovered and reported.

Keywords semiconductor nanowire      lasing characteristics      red-shift      bending loss      dominant peaks     
Corresponding Author(s): YANG Qing,   
Issue Date: 05 December 2013
 Cite this article:   
Weisong YANG,Yipei WANG,Yaoguang MA, et al. Lasing characteristics of curved semiconductor nanowires[J]. Front Optoelec, 2013, 6(4): 448-451.
E-mail this article
E-mail Alert
Articles by authors
Weisong YANG
Yipei WANG
Yaoguang MA
Xiaoqin WU
Fig.1  Schematic diagram of experimental setup for optical excitation and bending process. Upper inset, a dark-field optical image of a bent CdSe nanolaser. The scale bar is 5 μm. Below inset, a typical SEM image of a CdSe NW and the scale bar is 500 nm
Fig.2  Bright-field optical images of a 35 μm length 450 nm diameter CdSe NW with gradually decreased bending radius
Fig.3  (a) Output PL emissions spectra of straight and bent NW at the same pumping power, where and represent the curvature radius and >; (b) output laser emissions spectra of straight and bent NW; (c) plot of bending loss versus bending radius of PL and laser. Black exponential fitting line is for PL, and red one for laser
Fig.4  (a) Pump power dependent spectra for a straight CdSe NW. S stands for short wavelength mode, M stands for middle wavelength mode and L for long wavelength mode; (b) intensities of three individual modes (S, M, L) versus pump power; (c) pump power dependent spectra for a curved NW, S′ stands for short wavelength mode, M′ stands for middle wavelength mode and L′ for long wavelength mode; (d) intensities of three individual modes (S′, M′, L′) versus pump power
1 Yan R X, Gargas D, Yang P D. Nanowire photonics. Nature Photonics , 2009, 3(10): 569-576
doi: 10.1038/nphoton.2009.184
2 Grade?ak S, Qian F, Li Y, Park H G, Lieber C M. GaN nanowire lasers with low lasing thresholds. Applied Physics Letters , 2005, 87(17): 173111
doi: 10.1063/1.2115087
3 Song Y M, Xie Y, Malyarchuk V, Xiao J, Jung I, Choi K J, Liu Z, Park H, Lu C, Kim R H, Li R, Crozier K B, Huang Y, Rogers J A. Digital cameras with designs inspired by the arthropod eye. Nature , 2013, 497(7447): 95-99
doi: 10.1038/nature12083 pmid:23636401
4 Xu S, Qin Y, Xu C, Wei Y G, Yang R, Wang Z L. Self-powered nanowire devices. Nature Nanotechnology , 2010, 5(5): 366-373
doi: 10.1038/nnano.2010.46 pmid:20348913
5 Tong L M, Gattass R R, Ashcom J B, He S L, Lou J Y, Shen M Y, Maxwell I, Mazur E. Subwavelength-diameter silica wires for low-loss optical wave guiding. Nature , 2003, 426(6968): 816-819
doi: 10.1038/nature02193 pmid:14685232
6 Han X B, Kou L Z, Lang X L, Xia J B, Wang N, Qin R, Xu J, Liao Z M, Zhang X Z, Shan X D, Song X F, Gao J Y, Guo W L, Yu D P. Electronic and mechanical coupling in bent ZnO nanowires. Advanced Materials , 2009, 21(48): 4937-4941
doi: 10.1002/adma.200900956
7 Yang W S, Ma Y G, Wang Y P, Meng C, Wu X Q, Ye Y, Dai L, Tong L M, Liu X, Yang Q. Bending effects on lasing action of semiconductor nanowires. Optics Express , 2013, 21(2): 2024-2031
doi: 10.1364/OE.21.002024 pmid:23389184
8 Ma C, Ding Y, Moore D, Wang X D, Wang Z L. Single-crystal CdSe nanosaws. Journal of American Chemical Society , 2004, 126(3): 708-709
doi: 10.1021/ja0395644 pmid:14733532
9 Demtroeder W. Laser Spectroscopy. 3rd ed. New York: Springer, 2003
10 Li J, Meng C, Liu Y, Wu X, Lu Y, Ye Y, Dai L, Tong L, Liu X, Yang Q. Wavelength tunable CdSe nanowire lasers based on the absorption-emission-absorption process. Advanced Materials , 2013, 25(6): 833-837 , 832
doi: 10.1002/adma.201203692 pmid:23135956
11 Johnson J C, Choi H J, Knutsen K P, Schaller R D, Yang P, Saykally R J. Single gallium nitride nanowire lasers. Nature Materials , 2002, 1(2): 106-110
doi: 10.1038/nmat728 pmid:12618824
Related articles from Frontiers Journals
[1] Yaoguang MA, Limin TONG. Optically pumped semiconductor nanowire lasers[J]. Front Optoelec, 2012, 5(3): 239-247.
Full text