Transfer matrix modeling of avalanche photodiode

Abstract

In this article, we calculated and modeled the gain of In_0.53Ga_0.47As/InP avalanche photodiode (APD) based on a device mechanism and carrier rate equations using transfer matrix method (TMM). In fact, a distributed model was presented for calculating impact ionization (I²) and relating different sections of the multiplication region. In this proposed model, recessive equations were used, and device gain is considered proportional to the number of output photo-electrons and photo-holes. By comparison of simulated results with experimental data available in literature, it has been demonstrated the capability of the developed model as a powerful tool for simulating APDs’ behavior and interpreting their experimentally measured characteristics.

Keywords

avalanche photodetector (APD) / impact ionization (I²) / transfer matrix method (TMM)

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