Research on VOx uncooled infrared bolometer based on porous silicon

Bin WANG; Jianjun LAI; Erjing ZHAO; Haoming HU; Sihai CHEN

doi:10.1007/s12200-012-0224-7

Front. Optoelectron. ›› 2012, Vol. 5 ›› Issue (3) : 292 -297. DOI: 10.1007/s12200-012-0224-7

RESEARCH ARTICLE

Research on VO_x uncooled infrared bolometer based on porous silicon

Bin WANG ¹^,²
, Jianjun LAI ¹^,²^,^*
, Erjing ZHAO ¹
, Haoming HU ¹
, Sihai CHEN ¹^,²

Author information +

History +

PDF (418KB)

Abstract

In this paper, vanadium oxide thin film of TCR of -3.5%/K has been deposited by pulsed DC magnetron sputtering method. The property of this VO_x has been investigated by X-ray diffractometer (XRD) and atomic force microscopy (AFM) in detail. XRD test indicates that this film is composed of V₂O₃, V₃O₅ and VO₂.VO_x microbolometer with infrared (IR) absorbing structure is fabricated based on porous silicon sacrificial layer technology. Optimized micro-bridge structure is designed and carried out to decrease thermal conductance and this structure shows good compatibility with micromachining technology. This kind of bolometer with 74% IR absorption of 8–14 μm, has maximum detectivity of 1.09×10⁹ cm·Hz^1/2/W at 24 Hz frequency and 9.8 μA bias current.

Keywords

infrared (IR) / porous silicon / microbolometer / micromachining

Cite this article

Download citation ▾

Bin WANG,Jianjun LAI,Erjing ZHAO,Haoming HU,Sihai CHEN. Research on VO_x uncooled infrared bolometer based on porous silicon. Front. Optoelectron., 2012, 5(3): 292-297 DOI:10.1007/s12200-012-0224-7