Ge-on-Si for Si-based integrated materials and photonic devices

Abstract

This paper reviews the recent progress in photonic devices application of Ge-on-Si. Ge-on-Si materials and optical devices are suitable candidates for Si-based optoelectronic integration because of the mature epitaxial technique and the compatibility with Si complementary metal-oxide-semiconductor (CMOS) technology. Recently, the realities of electric-pump Ge light emitting diode (LED) and optical-pump pulse Ge laser, Ge quantum well modulator based on quantum Stark confined effect, waveguide Ge modulator based on Franz-Keldysh (FK) effect, and high performance near-infrared Ge detector, rendered the Si-based optoelectronic integration using Ge photonic devices. Ge-on-Si material is also an important platform to grow other materials on it for Si-based optoelectronic integration. InGaAs and GeSn have been grown on the Ge-on-Si. InGaAs LED and GeSn photodetector have been successfully fabricated as well.

Keywords

optoelectronic integration / Ge / photonic device

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Acknowledgements

This work was supported by the National High Technology Research and Development Program of China (No. 2011AA010302), the National Natural Science Foundation of China (Grant Nos. 61036003, 61176013, 60906035, 61177038), and by Tsinghua National Laboratory for Information Science and Technology (TNList) Cross-discipline Foundation.

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2014 Higher Education Press and Springer-Verlag Berlin Heidelberg