Design of unidirectional emission silicon/III-V laser for on-chip interconnects

Chucai GUO, Yongzhen HUANG, Yuede YANG, Xiaomeng LV, Qifeng YAO

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PDF(320 KB)
Front. Optoelectron. ›› 2012, Vol. 5 ›› Issue (1) : 94-98. DOI: 10.1007/s12200-012-0190-0
RESEARCH ARTICLE
RESEARCH ARTICLE

Design of unidirectional emission silicon/III-V laser for on-chip interconnects

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Abstract

We propose a unidirectional emission silicon/III-V laser, which comprises an III-V quantum wells microdisk connected to an output waveguide and a silicon-on-insulator (SOI) waveguide. Characteristics of the III-V microdisk with an output waveguide and mode coupling between the III-V output waveguide and the SOI waveguide are investigated by three-dimensional (3D) finite-difference time-domain (FDTD) method. Simulation results show that the Q factor of a coupled mode for a 7.5 μm diameter microdisk connected to a 0.5 μm wide output waveguide is about 8.5×104. And the coupling efficiency between the III-V output waveguide and the SOI waveguide is over 96% when the III-V waveguide width is 0.5 μm, the SOI waveguide width is 0.565 μm and the vertical gap between those two waveguides is 0.1 μm. The proposed hybrid laser would be of valuable applications for on-chip interconnects.

Keywords

silicon/III-V laser / unidirectional emission / three-dimensional (3D) finite-difference time-domain (FDTD) method / on-chip interconnects

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Chucai GUO, Yongzhen HUANG, Yuede YANG, Xiaomeng LV, Qifeng YAO. Design of unidirectional emission silicon/III-V laser for on-chip interconnects. Front Optoelec, 2012, 5(1): 94‒98 https://doi.org/10.1007/s12200-012-0190-0

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