Influence of V/III ratio on QD size distribution

Zhongwei SHI, Lirong HUANG, Yi YU, Peng TIAN, Hanchao WANG

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PDF(244 KB)
Front. Optoelectron. ›› 2011, Vol. 4 ›› Issue (4) : 364-368. DOI: 10.1007/s12200-011-0180-7
RESEARCH ARTICLE
RESEARCH ARTICLE

Influence of V/III ratio on QD size distribution

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Abstract

The influence of V/III ratio on the formation of quantum dots (QDs) grown by metal-organic chemical vapor deposition (MOCVD) is investigated by atomic force microscopy (AFM) and photoluminescence (PL) measurements. As V/III ratio increases, the density of QDs decreases accompanied by the transition of QD size distribution from bimodal (at V/III= 9) to single-modal (at V/III= 15), and then to bimodal (at V/III= 25) again, which is attributed to the change of the indium-species migration length at different V/III ratios. There are PL spectrum redshifts and the PL peak intensity decreases as V/III ratio increases.

Keywords

quantum dots (QDs) / V/III ratio / QD size distribution / photoluminescence (PL)

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Zhongwei SHI, Lirong HUANG, Yi YU, Peng TIAN, Hanchao WANG. Influence of V/III ratio on QD size distribution. Front Optoelec Chin, 2011, 4(4): 364‒368 https://doi.org/10.1007/s12200-011-0180-7

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Acknowledgements

This work was supported by the National High Technology Research and Development Program of China (No. 2007AA03Z414) and the National Natural Science Foundation of China (Grant No. 60777019).

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2014 Higher Education Press and Springer-Verlag Berlin Heidelberg
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