Growth of large size AgGaGeS₄ crystal for infrared conversion

Abstract

Single crystals of AgGaGeS₄ (AGGS) were grown in a modified Bridgman furnace with 25 mm in diameter and 70 mm in length. The transmission spectra of as-grown AGGS slices were measured on a Hitachi 270-30 spectrophotometer, the fabricated device crystal was 5 mm×5 mm×3.5 mm in dimension and its absorption was 0.04–0.15 cm^-1. Frequency doubling of 2.79 and 8 μm laser radiation were investigated using fabricated device crystals with thicknesses of 3.5 and 2.7 mm respectively.

Keywords

crystal growth / Bridgman technique / AgGaGeS4 (AGGS) / frequency doubling

References

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Acknowledgements

This work was supported by the Knowledge Innovation Program of the Chinese Academy of Sciences (No. 083RC11122).

RIGHTS & PERMISSIONS

2014 Higher Education Press and Springer-Verlag Berlin Heidelberg